Solid-phase diffusion mechanism for GaAs nanowire growth
(2004) In Nature Materials 3(10). p.677-681- Abstract
- Controllable production of nanometre-sized structures is an important field of research, and synthesis of one-dimensional objects, such as nanowires, is a rapidly expanding area with numerous applications, for example, in electronics, photonics, biology and medicine. Nanoscale electronic devices created inside nanowires, such as p-n junctions(1), were reported ten years ago. More recently, hetero-structure devices with clear quantum-mechanical behaviour have been reported, for example the double-barrier resonant tunnelling diode(2) and the single-electron transistor(3). The generally accepted theory of semiconductor nanowire growth is the vapour-liquid-solid (VLS) growth mechanism(4), based on growth from a liquid metal seed particle. In... (More)
- Controllable production of nanometre-sized structures is an important field of research, and synthesis of one-dimensional objects, such as nanowires, is a rapidly expanding area with numerous applications, for example, in electronics, photonics, biology and medicine. Nanoscale electronic devices created inside nanowires, such as p-n junctions(1), were reported ten years ago. More recently, hetero-structure devices with clear quantum-mechanical behaviour have been reported, for example the double-barrier resonant tunnelling diode(2) and the single-electron transistor(3). The generally accepted theory of semiconductor nanowire growth is the vapour-liquid-solid (VLS) growth mechanism(4), based on growth from a liquid metal seed particle. In this letter we suggest the existence of a growth regime quite different from VLS. We show that this new growth regime is based on a solid-phase diffusion mechanism of a single component through a gold seed particle, as shown by in situ heating experiments of GaAs nanowires in a transmission electron microscope, and supported by highly resolved chemical analysis and finite element calculations of the mass transport and composition profiles. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/138786
- author
- Persson, Ann LU ; Larsson, Magnus LU ; Stenström, Stig LU ; Ohlsson, Jonas LU ; Samuelson, Lars LU and Wallenberg, Reine LU
- organization
- publishing date
- 2004
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Nature Materials
- volume
- 3
- issue
- 10
- pages
- 677 - 681
- publisher
- Nature Publishing Group
- external identifiers
-
- wos:000224246200015
- pmid:15378051
- scopus:5444245579
- pmid:15378051
- ISSN
- 1476-4660
- DOI
- 10.1038/nmat1220
- language
- English
- LU publication?
- yes
- additional info
- The information about affiliations in this record was updated in December 2015. The record was previously connected to the following departments: Polymer and Materials Chemistry (LTH) (011001041), Solid State Physics (011013006), Chemical Engineering (011001014)
- id
- d56b1a86-f7cd-429d-b928-4f765d098246 (old id 138786)
- date added to LUP
- 2016-04-01 11:57:17
- date last changed
- 2023-11-25 19:46:48
@article{d56b1a86-f7cd-429d-b928-4f765d098246,
abstract = {{Controllable production of nanometre-sized structures is an important field of research, and synthesis of one-dimensional objects, such as nanowires, is a rapidly expanding area with numerous applications, for example, in electronics, photonics, biology and medicine. Nanoscale electronic devices created inside nanowires, such as p-n junctions(1), were reported ten years ago. More recently, hetero-structure devices with clear quantum-mechanical behaviour have been reported, for example the double-barrier resonant tunnelling diode(2) and the single-electron transistor(3). The generally accepted theory of semiconductor nanowire growth is the vapour-liquid-solid (VLS) growth mechanism(4), based on growth from a liquid metal seed particle. In this letter we suggest the existence of a growth regime quite different from VLS. We show that this new growth regime is based on a solid-phase diffusion mechanism of a single component through a gold seed particle, as shown by in situ heating experiments of GaAs nanowires in a transmission electron microscope, and supported by highly resolved chemical analysis and finite element calculations of the mass transport and composition profiles.}},
author = {{Persson, Ann and Larsson, Magnus and Stenström, Stig and Ohlsson, Jonas and Samuelson, Lars and Wallenberg, Reine}},
issn = {{1476-4660}},
language = {{eng}},
number = {{10}},
pages = {{677--681}},
publisher = {{Nature Publishing Group}},
series = {{Nature Materials}},
title = {{Solid-phase diffusion mechanism for GaAs nanowire growth}},
url = {{http://dx.doi.org/10.1038/nmat1220}},
doi = {{10.1038/nmat1220}},
volume = {{3}},
year = {{2004}},
}