Lift-off process for nanoimprint lithography
(2003) 28th International Conference on Micro- and Nano-Engineering, 2002 67-8. p.203-207- Abstract
- We report a novel a lift-off method for nanoimprint lithography. This is a bi-layer method, using a polymethyl methacrylate (PMMA) on lift-off layer (LOL) resist scheme. For the imprint step, direct evidence for good pattern transfer down to 20 nm is shown. Oxygen plasma ashing is required to remove residual PMMA. A liquid solvent, MF 319, is used to transfer the pattern down to the silicon. The LOL is dissolved isotropically while the PMMA is unaffected. Ashing time can kept to a minimum through the wet etch method. This reduces the line widening effect. After metal evaporation a two-step lift-off process prevents metal flakes from adhering to the surface electrostatically. At first warm acetone breakes apart the metal layer and dissolves... (More)
- We report a novel a lift-off method for nanoimprint lithography. This is a bi-layer method, using a polymethyl methacrylate (PMMA) on lift-off layer (LOL) resist scheme. For the imprint step, direct evidence for good pattern transfer down to 20 nm is shown. Oxygen plasma ashing is required to remove residual PMMA. A liquid solvent, MF 319, is used to transfer the pattern down to the silicon. The LOL is dissolved isotropically while the PMMA is unaffected. Ashing time can kept to a minimum through the wet etch method. This reduces the line widening effect. After metal evaporation a two-step lift-off process prevents metal flakes from adhering to the surface electrostatically. At first warm acetone breakes apart the metal layer and dissolves the PMMA, then warm Remover S-1165 removes the LOL and remaining metal. Structures of lines down to 50 nm and dots with a diameter of sub 20 nm are presented. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/307050
- author
- Carlberg, Patrick LU ; Graczyk, Mariusz LU ; Sarwe, Eva-Lena LU ; Maximov, Ivan LU ; Beck, Marc LU and Montelius, Lars LU
- organization
- publishing date
- 2003
- type
- Chapter in Book/Report/Conference proceeding
- publication status
- published
- subject
- keywords
- lift off method, nanoimprint lithography, polymethyl methacrylate, PMMA, pattern transfer, oxygen plasma, liquid solvent, silicon, wet etch method, metal evaporation, 50 nm, 20 nm, SiO2, Au, surface adhesion, metal flakes, acetone, dissolution, bilayer method, metal layer, line widening effect
- host publication
- Microelectronic Engineering
- volume
- 67-8
- pages
- 5 pages
- publisher
- Elsevier
- conference name
- 28th International Conference on Micro- and Nano-Engineering, 2002
- conference location
- Lugano, Switzerland
- conference dates
- 2002-09-16 - 2002-09-19
- external identifiers
-
- wos:000183842100028
- scopus:0038697354
- ISSN
- 0167-9317
- 1873-5568
- DOI
- 10.1016/S0167-9317(03)00072-8
- language
- English
- LU publication?
- yes
- id
- e141b111-999f-45f3-90ce-a51f6d3636bb (old id 307050)
- date added to LUP
- 2016-04-01 12:11:27
- date last changed
- 2024-06-04 11:13:19
@inproceedings{e141b111-999f-45f3-90ce-a51f6d3636bb, abstract = {{We report a novel a lift-off method for nanoimprint lithography. This is a bi-layer method, using a polymethyl methacrylate (PMMA) on lift-off layer (LOL) resist scheme. For the imprint step, direct evidence for good pattern transfer down to 20 nm is shown. Oxygen plasma ashing is required to remove residual PMMA. A liquid solvent, MF 319, is used to transfer the pattern down to the silicon. The LOL is dissolved isotropically while the PMMA is unaffected. Ashing time can kept to a minimum through the wet etch method. This reduces the line widening effect. After metal evaporation a two-step lift-off process prevents metal flakes from adhering to the surface electrostatically. At first warm acetone breakes apart the metal layer and dissolves the PMMA, then warm Remover S-1165 removes the LOL and remaining metal. Structures of lines down to 50 nm and dots with a diameter of sub 20 nm are presented.}}, author = {{Carlberg, Patrick and Graczyk, Mariusz and Sarwe, Eva-Lena and Maximov, Ivan and Beck, Marc and Montelius, Lars}}, booktitle = {{Microelectronic Engineering}}, issn = {{0167-9317}}, keywords = {{lift off method; nanoimprint lithography; polymethyl methacrylate; PMMA; pattern transfer; oxygen plasma; liquid solvent; silicon; wet etch method; metal evaporation; 50 nm; 20 nm; SiO2; Au; surface adhesion; metal flakes; acetone; dissolution; bilayer method; metal layer; line widening effect}}, language = {{eng}}, pages = {{203--207}}, publisher = {{Elsevier}}, title = {{Lift-off process for nanoimprint lithography}}, url = {{http://dx.doi.org/10.1016/S0167-9317(03)00072-8}}, doi = {{10.1016/S0167-9317(03)00072-8}}, volume = {{67-8}}, year = {{2003}}, }