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Electrostatic control of quasiparticle poisoning in a hybrid semiconductor-superconductor island

Nguyen, H. Q. ; Sabonis, D. ; Razmadze, D. ; Mannila, E. T. ; Maisi, V. F. LU ; van Zanten, D. M.T. ; O'Farrell, E. C.T. ; Krogstrup, P. ; Kuemmeth, F. and Pekola, J. P. , et al. (2023) In Physical Review B 108(4).
Abstract

The performance of superconducting devices is often degraded by the uncontrolled appearance and disappearance of quasiparticles, a process known as poisoning. We demonstrate the electrostatic control of quasiparticle poisoning in the form of single-charge tunneling across a fixed barrier onto a Coulomb island in an InAs/Al hybrid nanowire. High-bandwidth charge sensing was used to monitor the charge occupancy of the island across Coulomb blockade peaks, where tunneling rates were maximal, and Coulomb valleys, where tunneling was absent. Electrostatic gates changed the on-peak tunneling rates by two orders of magnitude for a barrier with fixed normal-state resistance, which we attribute to the gate dependence of the size and softness of... (More)

The performance of superconducting devices is often degraded by the uncontrolled appearance and disappearance of quasiparticles, a process known as poisoning. We demonstrate the electrostatic control of quasiparticle poisoning in the form of single-charge tunneling across a fixed barrier onto a Coulomb island in an InAs/Al hybrid nanowire. High-bandwidth charge sensing was used to monitor the charge occupancy of the island across Coulomb blockade peaks, where tunneling rates were maximal, and Coulomb valleys, where tunneling was absent. Electrostatic gates changed the on-peak tunneling rates by two orders of magnitude for a barrier with fixed normal-state resistance, which we attribute to the gate dependence of the size and softness of the induced superconducting gap on the island, corroborated by separate density-of-states measurements. Temperature and magnetic field dependence of tunneling rates are also investigated.

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organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Physical Review B
volume
108
issue
4
article number
L041302
publisher
American Physical Society
external identifiers
  • scopus:85165662719
ISSN
2469-9950
DOI
10.1103/PhysRevB.108.L041302
language
English
LU publication?
yes
id
e2cd6a26-40a7-41ff-8a8f-1b91696f13e5
date added to LUP
2023-12-20 14:56:04
date last changed
2023-12-20 14:57:31
@article{e2cd6a26-40a7-41ff-8a8f-1b91696f13e5,
  abstract     = {{<p>The performance of superconducting devices is often degraded by the uncontrolled appearance and disappearance of quasiparticles, a process known as poisoning. We demonstrate the electrostatic control of quasiparticle poisoning in the form of single-charge tunneling across a fixed barrier onto a Coulomb island in an InAs/Al hybrid nanowire. High-bandwidth charge sensing was used to monitor the charge occupancy of the island across Coulomb blockade peaks, where tunneling rates were maximal, and Coulomb valleys, where tunneling was absent. Electrostatic gates changed the on-peak tunneling rates by two orders of magnitude for a barrier with fixed normal-state resistance, which we attribute to the gate dependence of the size and softness of the induced superconducting gap on the island, corroborated by separate density-of-states measurements. Temperature and magnetic field dependence of tunneling rates are also investigated.</p>}},
  author       = {{Nguyen, H. Q. and Sabonis, D. and Razmadze, D. and Mannila, E. T. and Maisi, V. F. and van Zanten, D. M.T. and O'Farrell, E. C.T. and Krogstrup, P. and Kuemmeth, F. and Pekola, J. P. and Marcus, C. M.}},
  issn         = {{2469-9950}},
  language     = {{eng}},
  month        = {{07}},
  number       = {{4}},
  publisher    = {{American Physical Society}},
  series       = {{Physical Review B}},
  title        = {{Electrostatic control of quasiparticle poisoning in a hybrid semiconductor-superconductor island}},
  url          = {{http://dx.doi.org/10.1103/PhysRevB.108.L041302}},
  doi          = {{10.1103/PhysRevB.108.L041302}},
  volume       = {{108}},
  year         = {{2023}},
}