Photoluminescence study of as-grown vertically standing wurtzite InP nanowire ensembles.
Iqbal, Azhar LU ; Beech, Jason LU ; Anttu, Nicklas LU ; Pistol, Mats-Erik LU ; Samuelson, Lars LU ; Borgström, Magnus LU and Yartsev, Arkady LU
(2013)
In Nanotechnology
24(11).
- Abstract
- We demonstrate a method that enables the study of photoluminescence of as-grown nanowires on a native substrate by non-destructively suppressing the contribution of substrate photoluminescence. This is achieved by using polarized photo-excitation and photoluminescence and by making an appropriate choice of incident angle of both excitation beam and photoluminescence collection direction. Using T-polarized excitation at a wavelength of 488 nm at an incident angle of ∼70° we suppress the InP substrate photoluminescence relative to that of the InP nanowires by about 80 times. Consequently, the photoluminescence originating from the nanowires becomes comparable to and easily distinguishable from the substrate photoluminescence. The measured... (More)
- We demonstrate a method that enables the study of photoluminescence of as-grown nanowires on a native substrate by non-destructively suppressing the contribution of substrate photoluminescence. This is achieved by using polarized photo-excitation and photoluminescence and by making an appropriate choice of incident angle of both excitation beam and photoluminescence collection direction. Using T-polarized excitation at a wavelength of 488 nm at an incident angle of ∼70° we suppress the InP substrate photoluminescence relative to that of the InP nanowires by about 80 times. Consequently, the photoluminescence originating from the nanowires becomes comparable to and easily distinguishable from the substrate photoluminescence. The measured photoluminescence, which peaks at photon energies of ∼1.35 eV and ∼1.49 eV, corresponds to the InP substrate with zinc-blende crystal structure and to the InP nanowires with wurtzite crystal structure, respectively. The photoluminescence quantum yield of the nanowires was found to be ∼20 times lower than that of the InP substrate. The nanowires, grown vertically in a random ensemble, neither exhibit substantial emission polarization selectivity to the axis of the nanowires nor follow excitation polarization preferences observed previously for a single nanowire. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/3628690
- author
- Iqbal, Azhar
LU
; Beech, Jason
LU
; Anttu, Nicklas
LU
; Pistol, Mats-Erik
LU
; Samuelson, Lars
LU
; Borgström, Magnus
LU
and Yartsev, Arkady
LU
- organization
- publishing date
- 2013
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Nanotechnology
- volume
- 24
- issue
- 11
- article number
- 115706
- publisher
- IOP Publishing
- external identifiers
-
- wos:000315715300021
- pmid:23455456
- scopus:84874876358
- pmid:23455456
- ISSN
- 0957-4484
- DOI
- 10.1088/0957-4484/24/11/115706
- language
- English
- LU publication?
- yes
- additional info
- The information about affiliations in this record was updated in December 2015. The record was previously connected to the following departments: Solid State Physics (011013006), Chemical Physics (S) (011001060)
- id
- e3bb2511-5c1a-481a-a06c-e28bae49773f (old id 3628690)
- date added to LUP
- 2016-04-01 10:19:41
- date last changed
- 2023-08-30 23:55:32
@article{e3bb2511-5c1a-481a-a06c-e28bae49773f,
abstract = {{We demonstrate a method that enables the study of photoluminescence of as-grown nanowires on a native substrate by non-destructively suppressing the contribution of substrate photoluminescence. This is achieved by using polarized photo-excitation and photoluminescence and by making an appropriate choice of incident angle of both excitation beam and photoluminescence collection direction. Using T-polarized excitation at a wavelength of 488 nm at an incident angle of ∼70° we suppress the InP substrate photoluminescence relative to that of the InP nanowires by about 80 times. Consequently, the photoluminescence originating from the nanowires becomes comparable to and easily distinguishable from the substrate photoluminescence. The measured photoluminescence, which peaks at photon energies of ∼1.35 eV and ∼1.49 eV, corresponds to the InP substrate with zinc-blende crystal structure and to the InP nanowires with wurtzite crystal structure, respectively. The photoluminescence quantum yield of the nanowires was found to be ∼20 times lower than that of the InP substrate. The nanowires, grown vertically in a random ensemble, neither exhibit substantial emission polarization selectivity to the axis of the nanowires nor follow excitation polarization preferences observed previously for a single nanowire.}},
author = {{Iqbal, Azhar and Beech, Jason and Anttu, Nicklas and Pistol, Mats-Erik and Samuelson, Lars and Borgström, Magnus and Yartsev, Arkady}},
issn = {{0957-4484}},
language = {{eng}},
number = {{11}},
publisher = {{IOP Publishing}},
series = {{Nanotechnology}},
title = {{Photoluminescence study of as-grown vertically standing wurtzite InP nanowire ensembles.}},
url = {{http://dx.doi.org/10.1088/0957-4484/24/11/115706}},
doi = {{10.1088/0957-4484/24/11/115706}},
volume = {{24}},
year = {{2013}},
}