Characterization of semiconductors by spectroscopic ellipsometry
Schubert, Mathias LU
; Mock, Alyssa
; Stokey, Megan
; Rindert, Viktor
LU
; Armakavicius, Nerijus
and Darakchieva, Vanya
LU
(2024)
2.
p.2-539
- Abstract
This chapter provides a brief yet comprehensive overview of the state-of-the-art in semiconductor characterization using spectroscopic ellipsometry. The concept of ellipsometry as optical technique to determine the state of polarization of light reflected or transmitted from complex-structured and multiple layered semiconductor materials is introduced and laid out in the framework of the Jones vector and Mueller matrix calculus. The concept is expanded to applications in-situ during growth of semiconductor layer structures, and to include external magnetic fields. The latter leads to the concept of the optical Hall effect, a nondestructive method to determine contact-free free charge carrier mass, mobility, density, and signature of... (More)
This chapter provides a brief yet comprehensive overview of the state-of-the-art in semiconductor characterization using spectroscopic ellipsometry. The concept of ellipsometry as optical technique to determine the state of polarization of light reflected or transmitted from complex-structured and multiple layered semiconductor materials is introduced and laid out in the framework of the Jones vector and Mueller matrix calculus. The concept is expanded to applications in-situ during growth of semiconductor layer structures, and to include external magnetic fields. The latter leads to the concept of the optical Hall effect, a nondestructive method to determine contact-free free charge carrier mass, mobility, density, and signature of conductivity type parameters but also permits Landau Level spectroscopic ellipsometry. The concept also comprises electron spin resonance ellipsometry at terahertz frequencies permitting characterization of defects in semiconductor materials. Ellipsometry as a model-based technique requires approaches rooted in physics principles and some of which are discussed here. Correct interpretation of ellipsometry data is built on selecting appropriate physical models which reflect the nature of the underlying processes such as free charge carrier excitations, band-to-band transitions, exciton absorptions, phonon mode vibrations, or spin transitions, for example. A great deal of effort is placed on introducing the eigendielectric and eigenmagnetic polarization models which suffice to render the dielectric and magnetic response in all crystal structure symmetries of semiconductor materials. Examples demonstrate concepts and characterization of materials of contemporary interest and range from permittivity measurements of semiconductors from terahertz to ultraviolet spectral regions, during growth in-situ, in high magnetic fields, and at elevated temperatures. Material examples include gallium nitride and gallium oxide and related compounds.
(Less)
- author
- Schubert, Mathias
LU
; Mock, Alyssa
; Stokey, Megan
; Rindert, Viktor
LU
; Armakavicius, Nerijus
and Darakchieva, Vanya
LU
- organization
- publishing date
- 2024-01-01
- type
- Chapter in Book/Report/Conference proceeding
- publication status
- published
- subject
- keywords
- Absorption coefficient, Anisotropy, Artificial intelligence, Band-to-band transition, Birefringence, Defects, Dichroism, Doping, Ellipsometry, Exciton, Free charge carrier, Frequency dependence, In-situ, Landau level transitions, Machine learning, Optical constants, Optical Hall effect, Paramagnetic resonance, Permeability, Permittivity, Phonon, Spin transitions, Symmetry, Temperature-dependent, Thin film
- host publication
- Comprehensive Semiconductor Science and Technology, Second Edition : Volumes 1-3 - Volumes 1-3
- volume
- 2
- pages
- 2 - 539
- publisher
- Elsevier
- external identifiers
-
- scopus:85217075649
- ISBN
- 9780323960274
- 9780323958196
- DOI
- 10.1016/B978-0-323-96027-4.00038-3
- language
- English
- LU publication?
- yes
- additional info
- Publisher Copyright: © 2025 Elsevier B.V. All rights are reserved, including those for text and data mining, AI training, and similar technologies.
- id
- ef975035-cdb8-422d-8700-2fa77bef581f
- date added to LUP
- 2025-03-04 16:34:52
- date last changed
- 2025-07-09 03:32:40
@inbook{ef975035-cdb8-422d-8700-2fa77bef581f,
abstract = {{<p>This chapter provides a brief yet comprehensive overview of the state-of-the-art in semiconductor characterization using spectroscopic ellipsometry. The concept of ellipsometry as optical technique to determine the state of polarization of light reflected or transmitted from complex-structured and multiple layered semiconductor materials is introduced and laid out in the framework of the Jones vector and Mueller matrix calculus. The concept is expanded to applications in-situ during growth of semiconductor layer structures, and to include external magnetic fields. The latter leads to the concept of the optical Hall effect, a nondestructive method to determine contact-free free charge carrier mass, mobility, density, and signature of conductivity type parameters but also permits Landau Level spectroscopic ellipsometry. The concept also comprises electron spin resonance ellipsometry at terahertz frequencies permitting characterization of defects in semiconductor materials. Ellipsometry as a model-based technique requires approaches rooted in physics principles and some of which are discussed here. Correct interpretation of ellipsometry data is built on selecting appropriate physical models which reflect the nature of the underlying processes such as free charge carrier excitations, band-to-band transitions, exciton absorptions, phonon mode vibrations, or spin transitions, for example. A great deal of effort is placed on introducing the eigendielectric and eigenmagnetic polarization models which suffice to render the dielectric and magnetic response in all crystal structure symmetries of semiconductor materials. Examples demonstrate concepts and characterization of materials of contemporary interest and range from permittivity measurements of semiconductors from terahertz to ultraviolet spectral regions, during growth in-situ, in high magnetic fields, and at elevated temperatures. Material examples include gallium nitride and gallium oxide and related compounds.</p>}},
author = {{Schubert, Mathias and Mock, Alyssa and Stokey, Megan and Rindert, Viktor and Armakavicius, Nerijus and Darakchieva, Vanya}},
booktitle = {{Comprehensive Semiconductor Science and Technology, Second Edition : Volumes 1-3}},
isbn = {{9780323960274}},
keywords = {{Absorption coefficient; Anisotropy; Artificial intelligence; Band-to-band transition; Birefringence; Defects; Dichroism; Doping; Ellipsometry; Exciton; Free charge carrier; Frequency dependence; In-situ; Landau level transitions; Machine learning; Optical constants; Optical Hall effect; Paramagnetic resonance; Permeability; Permittivity; Phonon; Spin transitions; Symmetry; Temperature-dependent; Thin film}},
language = {{eng}},
month = {{01}},
pages = {{2--539}},
publisher = {{Elsevier}},
title = {{Characterization of semiconductors by spectroscopic ellipsometry}},
url = {{http://dx.doi.org/10.1016/B978-0-323-96027-4.00038-3}},
doi = {{10.1016/B978-0-323-96027-4.00038-3}},
volume = {{2}},
year = {{2024}},
}