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Extending the dynamic range and endurance of ferroelectric tunnel junctions by conductance growth control

Ozdemir, Ufuk ; Athle, Robin LU ; Sjoland, Henrik LU orcid and Borg, Mattias LU orcid (2025) In IEEE Transactions on Electron Devices
Abstract

We use a closed-loop algorithm to accurately program hafnium zirconium oxide (HZO) ferroelectric tunnel junctions (FTJs) to arbitrary chosen target conductance values. The key enabler is suppression of conductance growth. We have identified two different mechanisms contributing to the total conductance of FTJs. By controlling both, we demonstrated an up to threefold increase of the usable conductance range, allowing for 192 distinct states to be reliably programmed. Retention of the programmed states is independent of the absolute conductance level, allowing for 6-bit precision to be achievable for 22 min in the extended range. An additional benefit of suppressing conductance growth is a 100-fold extension of the device endurance.

Please use this url to cite or link to this publication:
author
; ; and
organization
publishing date
type
Contribution to journal
publication status
in press
subject
keywords
Conductance growth, Endurance, Ferroelectric (FE) devices, In-memory computing, Memristors, Neuromorphic computing
in
IEEE Transactions on Electron Devices
pages
7 pages
publisher
IEEE - Institute of Electrical and Electronics Engineers Inc.
external identifiers
  • scopus:105025706150
ISSN
0018-9383
DOI
10.1109/TED.2025.3642836
language
English
LU publication?
yes
id
f59f8b9b-01eb-4a44-ac61-2e4d50649aef
date added to LUP
2026-01-05 08:28:20
date last changed
2026-01-09 15:52:43
@article{f59f8b9b-01eb-4a44-ac61-2e4d50649aef,
  abstract     = {{<p>We use a closed-loop algorithm to accurately program hafnium zirconium oxide (HZO) ferroelectric tunnel junctions (FTJs) to arbitrary chosen target conductance values. The key enabler is suppression of conductance growth. We have identified two different mechanisms contributing to the total conductance of FTJs. By controlling both, we demonstrated an up to threefold increase of the usable conductance range, allowing for 192 distinct states to be reliably programmed. Retention of the programmed states is independent of the absolute conductance level, allowing for 6-bit precision to be achievable for 22 min in the extended range. An additional benefit of suppressing conductance growth is a 100-fold extension of the device endurance.</p>}},
  author       = {{Ozdemir, Ufuk and Athle, Robin and Sjoland, Henrik and Borg, Mattias}},
  issn         = {{0018-9383}},
  keywords     = {{Conductance growth; Endurance; Ferroelectric (FE) devices; In-memory computing; Memristors; Neuromorphic computing}},
  language     = {{eng}},
  publisher    = {{IEEE - Institute of Electrical and Electronics Engineers Inc.}},
  series       = {{IEEE Transactions on Electron Devices}},
  title        = {{Extending the dynamic range and endurance of ferroelectric tunnel junctions by conductance growth control}},
  url          = {{http://dx.doi.org/10.1109/TED.2025.3642836}},
  doi          = {{10.1109/TED.2025.3642836}},
  year         = {{2025}},
}