InAs nanowires grown by MOVPE
(2007) In Journal of Crystal Growth 298. p.631-634- Abstract
- Epitaxial growth of Au-assisted InAs nanowires using metal organic vapour phase epitaxy is investigated. The growth rate and morphology of nanowires as a function of growth temperature, substrate material and precursor flows are discussed. It is observed that tapering increases with both In and As precursor flows, but decreases with temperature. Finally, we report growth of InAs nanowires on both InAs and InP substrates, with those grown on InAs substrates exhibiting more tapered shape. (c) 2006 Elsevier B.V. All rights reserved.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/672635
- author
- Dick Thelander, Kimberly LU ; Deppert, Knut LU ; Samuelson, Lars LU and Seifert, Werner LU
- organization
- publishing date
- 2007
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- semiconducting III-V, nanostructures, metalorganic vapour phase epitaxy, material
- in
- Journal of Crystal Growth
- volume
- 298
- pages
- 631 - 634
- publisher
- Elsevier
- external identifiers
-
- wos:000244622600148
- scopus:33846423161
- ISSN
- 0022-0248
- DOI
- 10.1016/j.jcrysgro.2006.10.083
- language
- English
- LU publication?
- yes
- id
- f5d1f9df-89d7-4062-9db8-cff7b89cb79c (old id 672635)
- date added to LUP
- 2016-04-01 16:15:25
- date last changed
- 2022-01-28 18:23:12
@article{f5d1f9df-89d7-4062-9db8-cff7b89cb79c, abstract = {{Epitaxial growth of Au-assisted InAs nanowires using metal organic vapour phase epitaxy is investigated. The growth rate and morphology of nanowires as a function of growth temperature, substrate material and precursor flows are discussed. It is observed that tapering increases with both In and As precursor flows, but decreases with temperature. Finally, we report growth of InAs nanowires on both InAs and InP substrates, with those grown on InAs substrates exhibiting more tapered shape. (c) 2006 Elsevier B.V. All rights reserved.}}, author = {{Dick Thelander, Kimberly and Deppert, Knut and Samuelson, Lars and Seifert, Werner}}, issn = {{0022-0248}}, keywords = {{semiconducting III-V; nanostructures; metalorganic vapour phase epitaxy; material}}, language = {{eng}}, pages = {{631--634}}, publisher = {{Elsevier}}, series = {{Journal of Crystal Growth}}, title = {{InAs nanowires grown by MOVPE}}, url = {{http://dx.doi.org/10.1016/j.jcrysgro.2006.10.083}}, doi = {{10.1016/j.jcrysgro.2006.10.083}}, volume = {{298}}, year = {{2007}}, }