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Nanoimprint lithography for fabrication of three-terminal ballistic junctions in InP/GaInAs

Maximov, Ivan LU orcid ; Carlberg, Patrick LU ; Wallin, Daniel LU ; Shorubalko, Ivan LU ; Seifert, Werner LU ; Xu, Hongqi LU ; Montelius, Lars LU and Samuelson, Lars LU (2002) In Nanotechnology 13(5). p.666-668
Abstract
We present processing technology and characterization results for InP/GaInAs two-dimensional electron gas (2DEG) three-terminal ballistic junction (TBJ) devices manufactured using nanoimprint lithography (NIL). To transfer sub-100 nm features into a high-mobility InP-based 2DEG material, we used SiO2/Si stamps made using electron beam lithography and reactive ion etching. After NIL, the resist residues are removed in oxygen plasma; this is followed by wet etching of InP/GaInAs to define the TBJ structures. Fabricated TBJ devices are characterized using scanning electron microscopy and electron transport measurements. Highly non-linear electrical characteristics as predicted by the theory (Xu H Q 2001 APPI. Phys. Lett. 78 2064) are... (More)
We present processing technology and characterization results for InP/GaInAs two-dimensional electron gas (2DEG) three-terminal ballistic junction (TBJ) devices manufactured using nanoimprint lithography (NIL). To transfer sub-100 nm features into a high-mobility InP-based 2DEG material, we used SiO2/Si stamps made using electron beam lithography and reactive ion etching. After NIL, the resist residues are removed in oxygen plasma; this is followed by wet etching of InP/GaInAs to define the TBJ structures. Fabricated TBJ devices are characterized using scanning electron microscopy and electron transport measurements. Highly non-linear electrical characteristics as predicted by the theory (Xu H Q 2001 APPI. Phys. Lett. 78 2064) are demonstrated. (Less)
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author
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organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Nanotechnology
volume
13
issue
5
pages
666 - 668
publisher
IOP Publishing
external identifiers
  • wos:000179070200027
  • scopus:0036801415
ISSN
0957-4484
DOI
10.1088/0957-4484/13/5/325
language
English
LU publication?
yes
id
f6fbdbfd-ac3c-47af-b852-cd6cc2764798 (old id 324398)
date added to LUP
2016-04-01 11:58:13
date last changed
2025-10-14 10:26:17
@article{f6fbdbfd-ac3c-47af-b852-cd6cc2764798,
  abstract     = {{We present processing technology and characterization results for InP/GaInAs two-dimensional electron gas (2DEG) three-terminal ballistic junction (TBJ) devices manufactured using nanoimprint lithography (NIL). To transfer sub-100 nm features into a high-mobility InP-based 2DEG material, we used SiO2/Si stamps made using electron beam lithography and reactive ion etching. After NIL, the resist residues are removed in oxygen plasma; this is followed by wet etching of InP/GaInAs to define the TBJ structures. Fabricated TBJ devices are characterized using scanning electron microscopy and electron transport measurements. Highly non-linear electrical characteristics as predicted by the theory (Xu H Q 2001 APPI. Phys. Lett. 78 2064) are demonstrated.}},
  author       = {{Maximov, Ivan and Carlberg, Patrick and Wallin, Daniel and Shorubalko, Ivan and Seifert, Werner and Xu, Hongqi and Montelius, Lars and Samuelson, Lars}},
  issn         = {{0957-4484}},
  language     = {{eng}},
  number       = {{5}},
  pages        = {{666--668}},
  publisher    = {{IOP Publishing}},
  series       = {{Nanotechnology}},
  title        = {{Nanoimprint lithography for fabrication of three-terminal ballistic junctions in InP/GaInAs}},
  url          = {{http://dx.doi.org/10.1088/0957-4484/13/5/325}},
  doi          = {{10.1088/0957-4484/13/5/325}},
  volume       = {{13}},
  year         = {{2002}},
}