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Drive current and threshold voltage control in vertical InAs wrap-gate transistors

Rehnstedt, Carl LU ; Thelander, Claes LU ; Fröberg, Linus LU ; Ohlsson, B J ; Samuelson, Lars LU and Wernersson, Lars-Erik LU (2008) In Electronics Letters 44(3). p.236-237
Abstract
Results on fabrication and DC-characterisation of vertical InAs nanowire wrap-gate field-effect transistor arrays with a gate length of 50 nm are presented. Each nanowire array was processed into a transistor with a systematic variation in a number of wires and wire diameter over the sample. Extensive studies have been performed on the influence of wire number and diameter on the transistor characteristics due to a high device yield (84%). In particular it is shown that the threshold voltage depends on the wire diameter, with a change in the order of 5 mV/nm. These results show the possibility of changing the transistor characteristics on the sample by altering the wire dimensions, still using only one patterning and growth sequence.
Please use this url to cite or link to this publication:
author
; ; ; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Electronics Letters
volume
44
issue
3
pages
236 - 237
publisher
IEE
external identifiers
  • wos:000252959700046
  • scopus:38849180498
ISSN
1350-911X
DOI
10.1049/el:20083188
language
English
LU publication?
yes
id
fe53acdc-89cb-452d-b4c0-43ae9c3a07f5 (old id 1198737)
date added to LUP
2016-04-01 13:10:45
date last changed
2022-01-27 17:45:32
@article{fe53acdc-89cb-452d-b4c0-43ae9c3a07f5,
  abstract     = {{Results on fabrication and DC-characterisation of vertical InAs nanowire wrap-gate field-effect transistor arrays with a gate length of 50 nm are presented. Each nanowire array was processed into a transistor with a systematic variation in a number of wires and wire diameter over the sample. Extensive studies have been performed on the influence of wire number and diameter on the transistor characteristics due to a high device yield (84%). In particular it is shown that the threshold voltage depends on the wire diameter, with a change in the order of 5 mV/nm. These results show the possibility of changing the transistor characteristics on the sample by altering the wire dimensions, still using only one patterning and growth sequence.}},
  author       = {{Rehnstedt, Carl and Thelander, Claes and Fröberg, Linus and Ohlsson, B J and Samuelson, Lars and Wernersson, Lars-Erik}},
  issn         = {{1350-911X}},
  language     = {{eng}},
  number       = {{3}},
  pages        = {{236--237}},
  publisher    = {{IEE}},
  series       = {{Electronics Letters}},
  title        = {{Drive current and threshold voltage control in vertical InAs wrap-gate transistors}},
  url          = {{http://dx.doi.org/10.1049/el:20083188}},
  doi          = {{10.1049/el:20083188}},
  volume       = {{44}},
  year         = {{2008}},
}