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- 2022
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Mark
A new user-friendly materials science end station at the FinEstBeAMS beamline of MAX IV
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
- 2017
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Mark
Local variation in Bi crystal sites of epitaxial GaAsBi studied by photoelectron spectroscopy and first-principles calculations
(
- Contribution to journal › Article
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Mark
FinEstBeaMS – A wide-range Finnish-Estonian Beamline for Materials Science at the 1.5 GeV storage ring at the MAX IV Laboratory
2017) In Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 859. p.83-89(
- Contribution to journal › Article
- 2015
-
Mark
Oxidized crystalline (3 x 1)-O surface phases of InAs and InSb studied by high-resolution photoelectron spectroscopy
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- Contribution to journal › Article
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Mark
Line shape and composition of the In 3d(5/2) core-level photoemission for the interface analysis of In-containing III-V semiconductors
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- Contribution to journal › Article
- 2014
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Mark
Bismuth-containing c(4 x 4) surface structure of the GaAs(100) studied by synchrotron-radiation photoelectron spectroscopy and ab initio calculations
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- Contribution to journal › Article
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Mark
Unveiling and controlling the electronic structure of oxidized semiconductor surfaces: Crystalline oxidized InSb(100)(1 x 2)-O
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- Contribution to journal › Article
- 2013
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Mark
Photoemission and density functional theory study of Ge(100): Clean surface and Yb-induced (2x4) reconstruction
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- Contribution to journal › Article
- 2012
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Mark
Formation and destabilization of Ga interstitials in GaAsN: Experiment and theory
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- Contribution to journal › Article
- 2011
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Mark
Dimer-T(3) reconstruction of the Sm/Si(100)(2 x 3) surface studied by high-resolution photoelectron spectroscopy and density functional theory calculations
(
- Contribution to journal › Article