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- 2014
-
Mark
InN quantum dots on GaN nanowires grown by MOVPE
2014) 10th International Conference on Nitride Semiconductors (ICNS) In physica status solidi (c) 11. p.421-424(
- Contribution to journal › Article
- 2013
-
Mark
Semiconductor-Oxide Heterostructured Nanowires Using Postgrowth Oxidation.
(
- Contribution to journal › Article
- 2012
-
Mark
Electron Trapping in InP Nanowire FETs with Stacking Faults.
(
- Contribution to journal › Article
-
Mark
Single GaInP nanowire p-i-n junctions near the direct to indirect bandgap crossover point
(
- Contribution to journal › Article
-
Mark
GaInP Nanowire p-i-n Junctions with Electroluminescence at 569 nm near the Direct to Indirect Bandgap Crossover
2012) MRS Fall Meeting, 2012(
- Contribution to conference › Abstract
- 2011
-
Mark
Probing the Wurtzite Conduction Band Structure Using State Filling in Highly Doped InP Nanowires.
(
- Contribution to journal › Article
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Mark
Degenerate p-doping of InP nanowires for large area tunnel diodes
(
- Contribution to journal › Article
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Mark
Valence Band Splitting in Wurtzite InP Nanowires Observed by Photoluminescence and Photoluminescence Excitation Spectroscopy
(
- Contribution to journal › Article
-
Mark
Electron Image Series Reconstruction of Twin Interfaces in InP Superlattice Nanowires.
(
- Contribution to journal › Article
- 2010
-
Mark
Changes in Contact Angle of Seed Particle Correlated with Increased Zincblende Formation in Doped InP Nanowires.
(
- Contribution to journal › Article