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Semiconductor-Oxide Heterostructured Nanowires Using Postgrowth Oxidation.

Wallentin, Jesper LU ; Ek, Martin LU ; Vainorius, Neimantas LU ; Mergenthaler, Kilian LU ; Samuelson, Lars LU ; Pistol, Mats-Erik LU ; Wallenberg, Reine LU and Borgström, Magnus LU (2013) In Nano Letters 13(12). p.5961-5966
Abstract
Semiconductor-oxide heterointerfaces have several electron volts high-charge carrier potential barriers, which may enable devices utilizing quantum confinement at room temperature. While a single heterointerface is easily formed by oxide deposition on a crystalline semiconductor, as in MOS transistors, the amorphous structure of most oxides inhibits epitaxy of a second semiconductor layer. Here, we overcome this limitation by separating epitaxy from oxidation, using postgrowth oxidation of AlP segments to create axial and core-shell semiconductor-oxide heterostructured nanowires. Complete epitaxial AlP-InP nanowire structures were first grown in an oxygen-free environment. Subsequent exposure to air converted the AlP segments into... (More)
Semiconductor-oxide heterointerfaces have several electron volts high-charge carrier potential barriers, which may enable devices utilizing quantum confinement at room temperature. While a single heterointerface is easily formed by oxide deposition on a crystalline semiconductor, as in MOS transistors, the amorphous structure of most oxides inhibits epitaxy of a second semiconductor layer. Here, we overcome this limitation by separating epitaxy from oxidation, using postgrowth oxidation of AlP segments to create axial and core-shell semiconductor-oxide heterostructured nanowires. Complete epitaxial AlP-InP nanowire structures were first grown in an oxygen-free environment. Subsequent exposure to air converted the AlP segments into amorphous aluminum oxide segments, leaving isolated InP segments in an oxide matrix. InP quantum dots formed on the nanowire sidewalls exhibit room temperature photoluminescence with small line widths (down to 15 meV) and high intensity. This optical performance, together with the control of heterostructure segment length, diameter, and position, opens up for optoelectrical applications at room temperature. (Less)
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Nano Letters
volume
13
issue
12
pages
5961 - 5966
publisher
The American Chemical Society
external identifiers
  • wos:000328439200032
  • pmid:24195687
  • scopus:84890334043
ISSN
1530-6992
DOI
10.1021/nl4031192
language
English
LU publication?
yes
id
81a3822f-8639-4d1e-aacf-75c1e4160072 (old id 4179743)
date added to LUP
2013-12-10 15:37:52
date last changed
2019-02-20 02:51:37
@article{81a3822f-8639-4d1e-aacf-75c1e4160072,
  abstract     = {Semiconductor-oxide heterointerfaces have several electron volts high-charge carrier potential barriers, which may enable devices utilizing quantum confinement at room temperature. While a single heterointerface is easily formed by oxide deposition on a crystalline semiconductor, as in MOS transistors, the amorphous structure of most oxides inhibits epitaxy of a second semiconductor layer. Here, we overcome this limitation by separating epitaxy from oxidation, using postgrowth oxidation of AlP segments to create axial and core-shell semiconductor-oxide heterostructured nanowires. Complete epitaxial AlP-InP nanowire structures were first grown in an oxygen-free environment. Subsequent exposure to air converted the AlP segments into amorphous aluminum oxide segments, leaving isolated InP segments in an oxide matrix. InP quantum dots formed on the nanowire sidewalls exhibit room temperature photoluminescence with small line widths (down to 15 meV) and high intensity. This optical performance, together with the control of heterostructure segment length, diameter, and position, opens up for optoelectrical applications at room temperature.},
  author       = {Wallentin, Jesper and Ek, Martin and Vainorius, Neimantas and Mergenthaler, Kilian and Samuelson, Lars and Pistol, Mats-Erik and Wallenberg, Reine and Borgström, Magnus},
  issn         = {1530-6992},
  language     = {eng},
  number       = {12},
  pages        = {5961--5966},
  publisher    = {The American Chemical Society},
  series       = {Nano Letters},
  title        = {Semiconductor-Oxide Heterostructured Nanowires Using Postgrowth Oxidation.},
  url          = {http://dx.doi.org/10.1021/nl4031192},
  volume       = {13},
  year         = {2013},
}