Semiconductor-Oxide Heterostructured Nanowires Using Postgrowth Oxidation.
(2013) In Nano Letters 13(12). p.5961-5966- Abstract
- Semiconductor-oxide heterointerfaces have several electron volts high-charge carrier potential barriers, which may enable devices utilizing quantum confinement at room temperature. While a single heterointerface is easily formed by oxide deposition on a crystalline semiconductor, as in MOS transistors, the amorphous structure of most oxides inhibits epitaxy of a second semiconductor layer. Here, we overcome this limitation by separating epitaxy from oxidation, using postgrowth oxidation of AlP segments to create axial and core-shell semiconductor-oxide heterostructured nanowires. Complete epitaxial AlP-InP nanowire structures were first grown in an oxygen-free environment. Subsequent exposure to air converted the AlP segments into... (More)
- Semiconductor-oxide heterointerfaces have several electron volts high-charge carrier potential barriers, which may enable devices utilizing quantum confinement at room temperature. While a single heterointerface is easily formed by oxide deposition on a crystalline semiconductor, as in MOS transistors, the amorphous structure of most oxides inhibits epitaxy of a second semiconductor layer. Here, we overcome this limitation by separating epitaxy from oxidation, using postgrowth oxidation of AlP segments to create axial and core-shell semiconductor-oxide heterostructured nanowires. Complete epitaxial AlP-InP nanowire structures were first grown in an oxygen-free environment. Subsequent exposure to air converted the AlP segments into amorphous aluminum oxide segments, leaving isolated InP segments in an oxide matrix. InP quantum dots formed on the nanowire sidewalls exhibit room temperature photoluminescence with small line widths (down to 15 meV) and high intensity. This optical performance, together with the control of heterostructure segment length, diameter, and position, opens up for optoelectrical applications at room temperature. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/4179743
- author
- Wallentin, Jesper LU ; Ek, Martin LU ; Vainorius, Neimantas LU ; Mergenthaler, Kilian LU ; Samuelson, Lars LU ; Pistol, Mats-Erik LU ; Wallenberg, Reine LU and Borgström, Magnus LU
- organization
- publishing date
- 2013
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Nano Letters
- volume
- 13
- issue
- 12
- pages
- 5961 - 5966
- publisher
- The American Chemical Society (ACS)
- external identifiers
-
- wos:000328439200032
- pmid:24195687
- scopus:84890334043
- pmid:24195687
- ISSN
- 1530-6992
- DOI
- 10.1021/nl4031192
- language
- English
- LU publication?
- yes
- additional info
- The information about affiliations in this record was updated in December 2015. The record was previously connected to the following departments: Polymer and Materials Chemistry (LTH) (011001041), Solid State Physics (011013006)
- id
- 81a3822f-8639-4d1e-aacf-75c1e4160072 (old id 4179743)
- date added to LUP
- 2016-04-01 10:53:10
- date last changed
- 2023-08-31 13:59:47
@article{81a3822f-8639-4d1e-aacf-75c1e4160072, abstract = {{Semiconductor-oxide heterointerfaces have several electron volts high-charge carrier potential barriers, which may enable devices utilizing quantum confinement at room temperature. While a single heterointerface is easily formed by oxide deposition on a crystalline semiconductor, as in MOS transistors, the amorphous structure of most oxides inhibits epitaxy of a second semiconductor layer. Here, we overcome this limitation by separating epitaxy from oxidation, using postgrowth oxidation of AlP segments to create axial and core-shell semiconductor-oxide heterostructured nanowires. Complete epitaxial AlP-InP nanowire structures were first grown in an oxygen-free environment. Subsequent exposure to air converted the AlP segments into amorphous aluminum oxide segments, leaving isolated InP segments in an oxide matrix. InP quantum dots formed on the nanowire sidewalls exhibit room temperature photoluminescence with small line widths (down to 15 meV) and high intensity. This optical performance, together with the control of heterostructure segment length, diameter, and position, opens up for optoelectrical applications at room temperature.}}, author = {{Wallentin, Jesper and Ek, Martin and Vainorius, Neimantas and Mergenthaler, Kilian and Samuelson, Lars and Pistol, Mats-Erik and Wallenberg, Reine and Borgström, Magnus}}, issn = {{1530-6992}}, language = {{eng}}, number = {{12}}, pages = {{5961--5966}}, publisher = {{The American Chemical Society (ACS)}}, series = {{Nano Letters}}, title = {{Semiconductor-Oxide Heterostructured Nanowires Using Postgrowth Oxidation.}}, url = {{http://dx.doi.org/10.1021/nl4031192}}, doi = {{10.1021/nl4031192}}, volume = {{13}}, year = {{2013}}, }