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- 2014
-
Mark
Bonding in intermetallics may be deceptive – the case of the new type structure Au2InGa2
(
- Contribution to journal › Article
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Mark
InN Quantum Dots on GaN Nanowires Grown by MOVPE
2014) MRS Spring Meeting, 2014(
- Contribution to conference › Abstract
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Mark
InN quantum dots on GaN nanowires grown by MOVPE
2014) 10th International Conference on Nitride Semiconductors (ICNS) In physica status solidi (c) 11. p.421-424(
- Contribution to journal › Article
- 2013
-
Mark
Diameter Limitation in Growth of III-Sb-Containing Nanowire Heterostructures.
(
- Contribution to journal › Article
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Mark
Exploring the diameter limitation in III-Sb heterostructure growth
2013) 7th Nanowire growth workshop, 2013(
- Contribution to conference › Abstract
- 2012
-
Mark
Demonstration of Defect-Free and Composition Tunable Ga(x)In(1-x)Sb Nanowires.
(
- Contribution to journal › Article
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Mark
Growth of Straight InAs-on-GaAs Nanowire Heterostructures
2012) MRS Spring Meeting, 2012(
- Contribution to conference › Abstract
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Mark
Heterointerface Control in III-V Semiconductor Nanowires
2012) MRS Fall Meeting, 2012(
- Contribution to conference › Abstract
- 2011
-
Mark
Growth of Straight InAs-on-GaAs Nanowire Heterostructures.
(
- Contribution to journal › Article
-
Mark
Parameter space mapping of InAs nanowire crystal structure
(
- Contribution to journal › Article