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- 2008
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Mark
A highly tunable lateral quantum dot realized in InGaAs/InP by an etching technique
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- Contribution to journal › Article
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Mark
Spin States of holes in ge/si nanowire quantum dots.
(
- Contribution to journal › Article
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Mark
Bias and temperature dependence of the escape processes in quantum dots-in-a-well infrared photodetectors
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- Contribution to journal › Article
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Mark
High-Quality InAs/InSb Nanowire Heterostructures Grown by Metal-Organic Vapor-Phase Epitaxy.
(
- Contribution to journal › Article
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Mark
Monolithic GaAs/InGaP nanowire light emitting diodes on silicon
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- Contribution to journal › Article