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2024
Mark Detection of Very Fast Interface Traps at 4H-SiC/AlN and 4H-SiC/Al2O3 Interfaces
Vidarsson, A. M. ; Persson, A. R. ; Chen, J. T. ^LU ; Haasmann, D. ; Hassan, J. ; Dimitrijev, S. ; Rorsman, N. ; Darakchieva, V. ^LU and Sveinbjörnsson, E. (2024) 358. p.59-64
- Chapter in Book/Report/Conference proceeding › Book chapter
Mark Impact of Al profile in high-Al content AlGaN/GaN HEMTs on the 2DEG properties
Papamichail, A. ; Persson, A. R. ; Richter, S. ^LU ; Stanishev, V. ^LU ; Armakavicius, N. ; Kühne, P. ; Guo, S. ; Persson, P. O.I. ; Paskov, P. P. and Rorsman, N. , et al. (2024) In Applied Physics Letters 125(12).
- Contribution to journal › Article
2023
Mark Tuning composition in graded AlGaN channel HEMTs toward improved linearity for low-noise radio-frequency amplifiers
Papamichail, A. ; Persson, A. R. ^LU ; Richter, S. ^LU ; Kühne, P. ^LU ; Stanishev, V. ; Persson, P. O.Å. ^LU ; Ferrand-Drake Del Castillo, R. ; Thorsell, M. ; Hjelmgren, H. and Paskov, P. P. , et al. (2023) In Applied Physics Letters 122(15).
- Contribution to journal › Article
2022
Mark Mg-doping and free-hole properties of hot-wall MOCVD GaN
Papamichail, A. ; Kakanakova-Georgieva, A. ; Sveinbjörnsson, E. ; Persson, A. R. ; Hult, B. ; Rorsman, N. ; Stanishev, V. ; Le, S. P. ; Persson, P. O.Å. and Nawaz, M. , et al. (2022) In Journal of Applied Physics 131(18).
- Contribution to journal › Article

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