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- 2002
-
Mark
A novel frequency-multiplication device based on three-terminal ballistic junction
- Contribution to journal › Article
-
Mark
Realization of a resonant tunneling permeable base transistor with optimized overgrown GaAs interfaces
- Contribution to journal › Article
-
Mark
Designed emitter states in resonant tunneling through quantum dots
- Contribution to journal › Article
-
Mark
Three-terminal ballistic junctions: new building blocks for functional devices in nanoelectronics
(2002) Proceedings of 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science (NANO-7/ECOSS-21)
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Oxidation and reduction behaviour of Ge/Si islands
(2002) Proceedings of 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science (NANO-7/ECOSS-21)
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Site-controlled Ge quantum dot growth on Si by the use of electron beam pre-patterning
(2002) Proceedings of 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science (NANO-7/ECOSS-21)
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
A resonant tunneling permeable base transistor with Al-free tunneling barriers
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
A novel frequency-doubling device based on three-terminal ballistic junction
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Optically induced charge storage and current generation in InAs quantum dots
- Contribution to journal › Article
-
Mark
A proposal to estimate homogeneous and inhomogeneous energy level broadening in double barrier resonant tunneling diodes
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
