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- 2003
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Mark
Nanoimprint technology for fabrication of three-terminal ballistic junction devices in GaInAs/InP
(
- Contribution to journal › Article
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Mark
Decay kinetic properties of atoms in photonic crystals with absolute gaps
(
- Contribution to journal › Article
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Mark
Quantum effects in the transport properties of nanoelectronic, three-terminal Y-junction devices
(
- Contribution to journal › Article
- 2002
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Mark
Nanoimprint lithography for fabrication of three-terminal ballistic junctions in InP/GaInAs
(
- Contribution to journal › Article
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Mark
Diode and transistor behaviors of three-terminal ballistic junctions
(
- Contribution to journal › Article
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Mark
A novel device principle for nanoelectronics
2002) In Materials Science and Engineering C: Materials for Biological Applications 19(1-2). p.417-420(
- Contribution to journal › Article
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Mark
A novel electrical property of three-terminal ballistic junctions and its applications in nanoelectronics
(
- Contribution to journal › Article
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Mark
Characteristics of electron transport through vertical double-barrier quantum-dot structures: Effects of symmetric and asymmetric variations of the lateral confinement potentials
(
- Contribution to journal › Article
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Mark
Negative differential capacitance of quantum dots
(
- Contribution to journal › Article
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Mark
Method of calculations for electron transport in multiterminal quantum systems based on real-space lattice models
(
- Contribution to journal › Article