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- 2015
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Mark
Scanning Tunneling Spectroscopy on InAs-GaSb Esaki Diode Nanowire Devices during Operation.
(
- Contribution to journal › Article
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Mark
Measuring the properties of semiconductor nanowires with transmission electron microscopy
2015) p.203-219(
- Chapter in Book/Report/Conference proceeding › Book chapter
- 2014
-
Mark
Enhanced sputtering and incorporation of Mn in implanted GaAs and ZnO nanowires
(
- Contribution to journal › Article
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Mark
Measurements of light absorption efficiency in InSb nanowires
(
- Contribution to journal › Article
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Mark
Atomic-Scale Variability and Control of III-V Nanowire Growth Kinetics
(
- Contribution to journal › Article
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Mark
Crystal Phase-Dependent Nanophotonic Resonances in InAs Nanowire Arrays
(
- Contribution to journal › Article
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Mark
Observation of type-II recombination in single wurtzite/zinc-blende GaAs heterojunction nanowires
(
- Contribution to journal › Article
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Mark
High resolution scanning gate microscopy measurements on InAs/GaSb nanowire Esaki diode devices
(
- Contribution to journal › Article
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Mark
Metal-seeded growth of III-V semiconductor nanowires: towards gold-free synthesis.
(
- Contribution to journal › Article
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Mark
Realization of single and double axial InSb-GaSb heterostructure nanowires
(
- Contribution to journal › Article