151 – 160 of 160
- show: 10
- |
- sort: year (new to old)
Close
Embed this list
<iframe src=" "
width=" "
height=" "
allowtransparency="true"
frameborder="0">
</iframe>
- 2011
-
Mark
A new route towards semiconductor nanospintronics: highly Mn - doped GaAs nanowires realized by ion - implantation under dynamic annealing conditions.
2011) MRS Fall Meeting, 2011(
- Contribution to conference › Paper, not in proceeding
- 2010
-
Mark
High-Performance Single Nanowire Tunnel Diodes.
(
- Contribution to journal › Article
-
Mark
Changes in Contact Angle of Seed Particle Correlated with Increased Zincblende Formation in Doped InP Nanowires.
(
- Contribution to journal › Article
-
Mark
Doping Incorporation in InAs nanowires characterized by capacitance measurements
(
- Contribution to journal › Article
-
Mark
Bias-controlled friction of InAs nanowires on a silicon nitride layer studied by atomic force microscopy
(
- Contribution to journal › Article
-
Mark
Probing Strain in Bent Semiconductor Nanowires with Raman Spectroscopy.
(
- Contribution to journal › Article
-
Mark
Integration, gap formation, and sharpening of III-V heterostructure nanowires by selective etching
(
- Contribution to journal › Article
-
Mark
In Situ Etching for Total Control Over Axial and Radial Nanowire Growth
(
- Contribution to journal › Article
-
Mark
Time-resolved photoluminescence investigations on HfO2-capped InP nanowires
(
- Contribution to journal › Article
-
Mark
The electrical and structural properties of n-type InAs nanowires grown from metal-organic precursors.
(
- Contribution to journal › Article