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- 2012
-
Mark
Electrical Properties of n- and p-doped GaSb-InAsSb Nanowire Interband Tunnel Diodes
2012) MRS Fall Meeting, 2012(
- Contribution to conference › Abstract
- 2011
-
Mark
High current density Esaki tunnel diodes based on GaSb-InAsSb heterostructure nanowires
(
- Contribution to journal › Article
-
Mark
Probing the Wurtzite Conduction Band Structure Using State Filling in Highly Doped InP Nanowires.
(
- Contribution to journal › Article
-
Mark
Degenerate p-doping of InP nanowires for large area tunnel diodes
(
- Contribution to journal › Article
-
Mark
Diameter reduction of nanowire tunnel heterojunctions using in situ annealing
(
- Contribution to journal › Article
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Mark
InAs quantum dots and quantum wells grown on stacking-fault controlled InP nanowires with wurtzite crystal structure
(
- Contribution to journal › Article
-
Mark
Valence Band Splitting in Wurtzite InP Nanowires Observed by Photoluminescence and Photoluminescence Excitation Spectroscopy
(
- Contribution to journal › Article
-
Mark
GaAs-based Nanowires Studied by Low-Temperature Cathodoluminescence
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Electron Image Series Reconstruction of Twin Interfaces in InP Superlattice Nanowires.
(
- Contribution to journal › Article
-
Mark
Formation of the axial heterojunction in GaSb/InAs(Sb) nanowires with high crystal quality
(
- Contribution to journal › Article