High current density Esaki tunnel diodes based on GaSb-InAsSb heterostructure nanowires
(2011) In Nano Letters 11(10). p.4222-4226- Abstract
- We present electrical characterization of broken gap GaSb-InAsSb nanowire heterojunctions. Esaki diode characteristics with maximum reverse current of 1750 kA/cm2 at 0.50 V, maximum peak current of 67 kA/cm2 at 0.11 V, and peak-to-valley ratio (PVR) of 2.1 are obtained at room temperature. The reverse current density is comparable to that of state-of-the-art tunnel diodes based on heavily doped p-n junctions. However, the GaSb-InAsSb diodes investigated in this work do not rely on heavy doping, which permits studies of transport mechanisms in simple transistor structures processed with high-κ gate dielectrics and top-gates. Such processing results in devices with improved PVR (3.5) and stability of the electrical properties.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/2158622
- author
- Ganjipour, Bahram LU ; Dey, Anil LU ; Borg, Mattias LU ; Ek, Martin LU ; Pistol, Mats-Erik LU ; Dick Thelander, Kimberly LU ; Wernersson, Lars-Erik LU and Thelander, Claes LU
- organization
- publishing date
- 2011
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Nano Letters
- volume
- 11
- issue
- 10
- pages
- 5 pages
- publisher
- The American Chemical Society (ACS)
- external identifiers
-
- wos:000295667000033
- pmid:21894940
- scopus:80054012791
- pmid:21894940
- ISSN
- 1530-6992
- DOI
- 10.1021/nl202180b
- language
- English
- LU publication?
- yes
- additional info
- The information about affiliations in this record was updated in December 2015. The record was previously connected to the following departments: Polymer and Materials Chemistry (LTH) (011001041), Solid State Physics (011013006), Electrical and information technology (011041010)
- id
- 80a27a66-ed85-495f-a32d-c30316237827 (old id 2158622)
- date added to LUP
- 2016-04-01 13:36:00
- date last changed
- 2023-11-12 19:03:13
@article{80a27a66-ed85-495f-a32d-c30316237827, abstract = {{We present electrical characterization of broken gap GaSb-InAsSb nanowire heterojunctions. Esaki diode characteristics with maximum reverse current of 1750 kA/cm2 at 0.50 V, maximum peak current of 67 kA/cm2 at 0.11 V, and peak-to-valley ratio (PVR) of 2.1 are obtained at room temperature. The reverse current density is comparable to that of state-of-the-art tunnel diodes based on heavily doped p-n junctions. However, the GaSb-InAsSb diodes investigated in this work do not rely on heavy doping, which permits studies of transport mechanisms in simple transistor structures processed with high-κ gate dielectrics and top-gates. Such processing results in devices with improved PVR (3.5) and stability of the electrical properties.}}, author = {{Ganjipour, Bahram and Dey, Anil and Borg, Mattias and Ek, Martin and Pistol, Mats-Erik and Dick Thelander, Kimberly and Wernersson, Lars-Erik and Thelander, Claes}}, issn = {{1530-6992}}, language = {{eng}}, number = {{10}}, pages = {{4222--4226}}, publisher = {{The American Chemical Society (ACS)}}, series = {{Nano Letters}}, title = {{High current density Esaki tunnel diodes based on GaSb-InAsSb heterostructure nanowires}}, url = {{http://dx.doi.org/10.1021/nl202180b}}, doi = {{10.1021/nl202180b}}, volume = {{11}}, year = {{2011}}, }