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- 2009
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Mark
Gate-defined quantum-dot devices realized in InGaAs/InP by incorporating a HfO2 layer as gate dielectric
(
- Contribution to journal › Article
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Mark
Spin-3/2 physics of semiconductor hole nanowires: Valence-band mixing and tunable interplay between bulk-material and orbital bound-state spin splittings
(
- Contribution to journal › Article