Jie Sun
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- 2011
- Memristive and Memcapacitive Characteristics of a Au/Ti-HfO2-InP/InGaAs Diode
- Gate-Defined Quantum Devices Realized in InGaAs/InP by Incorporating a High-kappa Layer as Gate Dielectric
- 2010
- Gate-defined double quantum dot with integrated charge sensors realized in InGaAs/InP by incorporating a high-kappa dielectric
- Nonlinear electrical properties of Si three-terminal junction devices
- 2009
- Gate-defined quantum-dot devices realized in InGaAs/InP by incorporating a HfO2 layer as gate dielectric
- Gate-defined quantum devices realized on an InGaAs/InP heterostructure by incorporating a high-kappa dielectric material
- Semiconductor Nanoelectronic Devices Based on Ballistic and Quantum Effects
- 2008
- A novel SR latch device realized by integration of three-terminal ballistic junctions in InGaAs/InP
- A sequential logic device realized by integration of in-plane gate transistors in InGaAs/InP
- Novel room-temperature functional analogue and digital nanoelectronic circuits based on three-terminal ballistic junctions and planar quantum-wire transistors