Jie Sun (Former)

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2022
Mark EFFECT OF DIELECTRIC BARRIER DISCHARGE PLASMA ON FILM COOLING PERFORMANCE
Sun, Jie ^LU ; Zhang, Fuxing ; Wang, Jin ^LU ; Baleta, Jakov ; Xie, Gongnan ^LU and Sunden, Bengt ^LU (2022) In Thermal Science 26(5). p.4157-4168
- Contribution to journal › Article
Mark Effects of swirler blade angle and actuator applied voltage on combustion characteristics and cooling effectiveness
Hu, Zhenwei ; Sun, Jie ^LU ; Wang, Jin ^LU ; Ma, Ting ; Baleta, Jakov and Sundén, Bengt ^LU (2022) In Fuel 323.
- Contribution to journal › Article
2011
Mark Gate-Defined Quantum Devices Realized in InGaAs/InP by Incorporating a High-kappa Layer as Gate Dielectric
Sun, Jie ^LU ; Larsson, Marcus ^LU and Xu, Hongqi ^LU (2011) 30th International Conference on the Physics of Semiconductors (ICPS-30) 1399. p.285-286
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
Mark Memristive and Memcapacitive Characteristics of a Au/Ti-HfO2-InP/InGaAs Diode
Sun, Jie ^LU ; Lind, Erik ^LU ; Maximov, Ivan ^LU and Xu, Hongqi ^LU (2011) In IEEE Electron Device Letters 32(2). p.131-133
- Contribution to journal › Article
2010
Mark Nonlinear electrical properties of Si three-terminal junction devices
Meng, Fantao ; Sun, Jie ^LU ; Graczyk, Mariusz ^LU ; Zhang, Kailiang ; Prunnila, Mika ; Ahopelto, Jouni ; Shi, Peixiong ; Chu, Jinkui ; Maximov, Ivan ^LU and Xu, Hongqi ^LU (2010) In Applied Physics Letters 97(24).
- Contribution to journal › Article
Mark Gate-defined double quantum dot with integrated charge sensors realized in InGaAs/InP by incorporating a high-kappa dielectric
Sun, Jie ^LU ; Larsson, Marcus ^LU ; Maximov, Ivan ^LU and Xu, Hongqi ^LU (2010) In Applied Physics Letters 96(16).
- Contribution to journal › Article
2009
Mark Gate-defined quantum-dot devices realized in InGaAs/InP by incorporating a HfO2 layer as gate dielectric
Sun, Jie ^LU ; Larsson, Marcus ^LU ; Maximov, Ivan ^LU ; Hardtdegen, Hilde and Xu, Hongqi ^LU (2009) In Applied Physics Letters 94(4).
- Contribution to journal › Article
Mark Semiconductor Nanoelectronic Devices Based on Ballistic and Quantum Effects
Sun, Jie ^LU (2009)
- Thesis › Doctoral thesis (monograph)
Mark Gate-defined quantum devices realized on an InGaAs/InP heterostructure by incorporating a high-kappa dielectric material
Sun, Jie ^LU ; Larsson, Marcus ^LU ; Maximov, Ivan ^LU and Xu, Hongqi ^LU (2009) IEEE Nanotechnology Materials and Devices Conference p.183-185
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
2008
Mark Transport properties of three-terminal ballistic junctions realized by focused ion beam enhanced etching in InGaAs/InP
Frimmer, Martin ; Sun, Jie ^LU ; Maximov, Ivan ^LU and Xu, Hongxing ^LU (2008) In Applied Physics Letters 93(13).
- Contribution to journal › Article

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