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- 2012
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Mark
Electrical properties of InAs1-xSbx and InSb nanowires grown by molecular beam epitaxy
(
- Contribution to journal › Article
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Mark
Faceting, composition and crystal phase evolution in III-V antimonide nanowire heterostructures revealed by combining microscopy techniques
(
- Contribution to journal › Article
- 2011
-
Mark
Effects of crystal phase mixing on the electrical properties of InAs nanowires
(
- Contribution to journal › Article
- 2010
-
Mark
Direct integration of GaAs/GaAsSb nanowires grown by MBE on SI without extrinsic metal particle
2010) MRS Spring Meeting, 2010(
- Contribution to conference › Paper, not in proceeding
-
Mark
Gold-free growth of GaAs nanowires on silicon: arrays and polytypism
(
- Contribution to journal › Article