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- 2024
-
Mark
Simulating Vertical GaN FinFETs in Sentaurus
(
- Master (Two yrs)
- 2023
-
Mark
Design and Modeling of InxGa(1−x)As/InP based Nanosheet Field Effect Transistors for High Frequency Applications
(
- Master (Two yrs)
- 2022
-
Mark
Simulating the Effect of Spatial Potential Variation in Nanodevices with the NEGF Method
(
- Master (Two yrs)
-
Mark
Fabrication and Characterization of Quantum-well Field Effect Transistor
(
- Master (Two yrs)
-
Mark
Investigation on the Optimization of GaN Etching for FinFET Applications
(
- Master (Two yrs)
- 2021
-
Mark
Simulating the effect of structural imperfections on nanowire transport properties using kwant
(
- Master (Two yrs)
-
Mark
Hall Measurements at Cryogenic Temperatures
(
- Master (Two yrs)
- 2020
-
Mark
Design of Two 28 GHz Doherty Power Amplifier Topologies with Vertical In(Ga)As Nanowire Transistors
(
- Master (Two yrs)
-
Mark
Nanowire based mm-wave LNA and switch design
(
- Master (Two yrs)
- 2018
-
Mark
Capacitance Optimization and Ballistic Modeling of Nanowire Transistors
(
- Master (Two yrs)