Development of a Vertical Wrap-Gated InAs FET
(2008) In IEEE Transactions on Electron Devices 55(11). p.3030-3036- Abstract
- In this paper, we report on the development of a vertical wrap-gated field-effect transistor based on epitaxially grown InAs nanowires. We discuss some of the important steps involved in the growth and processing, such as nanowire position control in situ doping, high-kappa dielectric deposition, spacer layer formation: and metal wrap-gate fabrication. In particular, we compare a few alternative methods for deposition of materials onto vertical structures and discuss their potential advantages and limitations. Finally, we also present a comparison of transistor performance for nanowires grown using two different epitaxial techniques.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/1283426
- author
- Thelander, Claes ; Rehnstedt, Carl ; Froberg, Linus E. ; Lind, Erik ; Martensson, Thomas ; Caroff, Philippe ; Lowgren, Truls ; Ohlsson, B. Jonas ; Samuelson, Lars and Wernersson, Lars-Erik LU
- organization
- publishing date
- 2008
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- nanowire, Field-effect transistor (FET), InAs, wrap gate, surround gate
- in
- IEEE Transactions on Electron Devices
- volume
- 55
- issue
- 11
- pages
- 3030 - 3036
- publisher
- IEEE - Institute of Electrical and Electronics Engineers Inc.
- external identifiers
-
- wos:000260899000021
- scopus:56549106697
- ISSN
- 0018-9383
- DOI
- 10.1109/TED.2008.2005151
- language
- English
- LU publication?
- yes
- id
- 9ce41a8c-b1a1-4cdb-9ea8-f3239f965297 (old id 1283426)
- date added to LUP
- 2016-04-01 14:18:15
- date last changed
- 2022-03-29 20:18:33
@article{9ce41a8c-b1a1-4cdb-9ea8-f3239f965297, abstract = {{In this paper, we report on the development of a vertical wrap-gated field-effect transistor based on epitaxially grown InAs nanowires. We discuss some of the important steps involved in the growth and processing, such as nanowire position control in situ doping, high-kappa dielectric deposition, spacer layer formation: and metal wrap-gate fabrication. In particular, we compare a few alternative methods for deposition of materials onto vertical structures and discuss their potential advantages and limitations. Finally, we also present a comparison of transistor performance for nanowires grown using two different epitaxial techniques.}}, author = {{Thelander, Claes and Rehnstedt, Carl and Froberg, Linus E. and Lind, Erik and Martensson, Thomas and Caroff, Philippe and Lowgren, Truls and Ohlsson, B. Jonas and Samuelson, Lars and Wernersson, Lars-Erik}}, issn = {{0018-9383}}, keywords = {{nanowire; Field-effect transistor (FET); InAs; wrap gate; surround gate}}, language = {{eng}}, number = {{11}}, pages = {{3030--3036}}, publisher = {{IEEE - Institute of Electrical and Electronics Engineers Inc.}}, series = {{IEEE Transactions on Electron Devices}}, title = {{Development of a Vertical Wrap-Gated InAs FET}}, url = {{http://dx.doi.org/10.1109/TED.2008.2005151}}, doi = {{10.1109/TED.2008.2005151}}, volume = {{55}}, year = {{2008}}, }