III-V Nanowires-Extending a Narrowing Road
(2010) In Proceedings of the IEEE 98(12). p.2047-2060- Abstract
- Semiconductor nanowires have attracted considerable attention during the last decade and are considered as an alternative path to extend the road for scaled semiconductor devices. The interest is motivated by the improved electrostatic control in the cylindrical geometry and the possibility to utilize heterostructures in transistor design. Currently, nanowire transistors have been realized both in III-Vs and in group IV materials employing top-down as well as bottom-up technologies. In this review, we give an overview of the field and, in particular, we summarize state-of-the-art for III-V nanowire devices. It is demonstrated that the growth and processing technologies are maturing and that devices with good transistor characteristics are... (More)
- Semiconductor nanowires have attracted considerable attention during the last decade and are considered as an alternative path to extend the road for scaled semiconductor devices. The interest is motivated by the improved electrostatic control in the cylindrical geometry and the possibility to utilize heterostructures in transistor design. Currently, nanowire transistors have been realized both in III-Vs and in group IV materials employing top-down as well as bottom-up technologies. In this review, we give an overview of the field and, in particular, we summarize state-of-the-art for III-V nanowire devices. It is demonstrated that the growth and processing technologies are maturing and that devices with good transistor characteristics are being fabricated by a combined bottom-up and top-down approach. Also, the first radio-frequency (RF)-implementations are reviewed and discussed. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/1751614
- author
- Wernersson, Lars-Erik LU ; Thelander, Claes LU ; Lind, Erik LU and Samuelson, Lars LU
- organization
- publishing date
- 2010
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- nanowire field-effect transistors (FETs), nanotechnology, Complementary metal-oxide-semiconductor (CMOS), III-V, metal-oxide-semiconductor field-effect transistors (MOSFETs)
- in
- Proceedings of the IEEE
- volume
- 98
- issue
- 12
- pages
- 2047 - 2060
- publisher
- IEEE - Institute of Electrical and Electronics Engineers Inc.
- external identifiers
-
- wos:000284410800007
- scopus:78649997061
- ISSN
- 0018-9219
- DOI
- 10.1109/JPROC.2010.2065211
- language
- English
- LU publication?
- yes
- id
- f7c7cd6d-010a-40fb-b6c5-d58a5c4a038e (old id 1751614)
- date added to LUP
- 2016-04-01 14:55:03
- date last changed
- 2024-02-25 20:19:49
@article{f7c7cd6d-010a-40fb-b6c5-d58a5c4a038e, abstract = {{Semiconductor nanowires have attracted considerable attention during the last decade and are considered as an alternative path to extend the road for scaled semiconductor devices. The interest is motivated by the improved electrostatic control in the cylindrical geometry and the possibility to utilize heterostructures in transistor design. Currently, nanowire transistors have been realized both in III-Vs and in group IV materials employing top-down as well as bottom-up technologies. In this review, we give an overview of the field and, in particular, we summarize state-of-the-art for III-V nanowire devices. It is demonstrated that the growth and processing technologies are maturing and that devices with good transistor characteristics are being fabricated by a combined bottom-up and top-down approach. Also, the first radio-frequency (RF)-implementations are reviewed and discussed.}}, author = {{Wernersson, Lars-Erik and Thelander, Claes and Lind, Erik and Samuelson, Lars}}, issn = {{0018-9219}}, keywords = {{nanowire field-effect transistors (FETs); nanotechnology; Complementary metal-oxide-semiconductor (CMOS); III-V; metal-oxide-semiconductor field-effect transistors (MOSFETs)}}, language = {{eng}}, number = {{12}}, pages = {{2047--2060}}, publisher = {{IEEE - Institute of Electrical and Electronics Engineers Inc.}}, series = {{Proceedings of the IEEE}}, title = {{III-V Nanowires-Extending a Narrowing Road}}, url = {{http://dx.doi.org/10.1109/JPROC.2010.2065211}}, doi = {{10.1109/JPROC.2010.2065211}}, volume = {{98}}, year = {{2010}}, }