Electronic properties and structure of a complex incorporating a self-interstitial and two oxygen atoms in silicon
(2005) In Solid State Phenomena 108-109. p.273-278- Abstract
- The electronic properties and structure of a complex incorporating a self-interstitial (i) and two oxygen atoms are presented by a combination of deep level transient spectroscopy (DLTS), infrared absorption spectroscopy and ab-initio modeling studies. It is argued that the IO2 complex in Si can exist in four charge states (IO2-, IO20, IO2+, and IO2++). The first and the second donor levels of the IO2 complex show an inverted location order in the gap, leading to a E(0/+ +) occupancy level at E-V + 0.255 eV. Activation energies for hole emission, transformation barriers between different structures, and positions of LVM lines for different configurations and charge states have been determined. These observables were calculated by... (More)
- The electronic properties and structure of a complex incorporating a self-interstitial (i) and two oxygen atoms are presented by a combination of deep level transient spectroscopy (DLTS), infrared absorption spectroscopy and ab-initio modeling studies. It is argued that the IO2 complex in Si can exist in four charge states (IO2-, IO20, IO2+, and IO2++). The first and the second donor levels of the IO2 complex show an inverted location order in the gap, leading to a E(0/+ +) occupancy level at E-V + 0.255 eV. Activation energies for hole emission, transformation barriers between different structures, and positions of LVM lines for different configurations and charge states have been determined. These observables were calculated by density-functional calculations, which show that they are accounted for if we consider at least two charge-dependent defect structures. (Less)
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https://lup.lub.lu.se/record/210264
- author
- organization
- publishing date
- 2005
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- infrared absorption, DLTS, self-interstitial, silicon, oxygen, ab-initio modeling
- in
- Solid State Phenomena
- volume
- 108-109
- pages
- 273 - 278
- publisher
- Trans Tech Publications
- external identifiers
-
- wos:000234198300043
- scopus:34247888366
- ISSN
- 1012-0394
- language
- English
- LU publication?
- yes
- id
- d08767ba-8c86-432d-8d6e-eb319d9db7eb (old id 210264)
- date added to LUP
- 2016-04-01 16:21:41
- date last changed
- 2022-01-28 19:12:12
@article{d08767ba-8c86-432d-8d6e-eb319d9db7eb, abstract = {{The electronic properties and structure of a complex incorporating a self-interstitial (i) and two oxygen atoms are presented by a combination of deep level transient spectroscopy (DLTS), infrared absorption spectroscopy and ab-initio modeling studies. It is argued that the IO2 complex in Si can exist in four charge states (IO2-, IO20, IO2+, and IO2++). The first and the second donor levels of the IO2 complex show an inverted location order in the gap, leading to a E(0/+ +) occupancy level at E-V + 0.255 eV. Activation energies for hole emission, transformation barriers between different structures, and positions of LVM lines for different configurations and charge states have been determined. These observables were calculated by density-functional calculations, which show that they are accounted for if we consider at least two charge-dependent defect structures.}}, author = {{Markevich, VP and Murin, LI and Lastovskii, SB and Medvedeva, IF and Lindström, Lennart and Peaker, AR and Coutinho, J and Jones, R and Torres, VJB and Oberg, S and Briddon, PR}}, issn = {{1012-0394}}, keywords = {{infrared absorption; DLTS; self-interstitial; silicon; oxygen; ab-initio modeling}}, language = {{eng}}, pages = {{273--278}}, publisher = {{Trans Tech Publications}}, series = {{Solid State Phenomena}}, title = {{Electronic properties and structure of a complex incorporating a self-interstitial and two oxygen atoms in silicon}}, volume = {{108-109}}, year = {{2005}}, }