Highly controlled InAs nanowires on Si(111) wafers by MOVPE
Gorji, Sepideh LU ; Johansson, Sofia LU ; Borg, Mattias LU
; Dick Thelander, Kimberly
LU
and Wernersson, Lars-Erik
LU
(2012)
38th International Symposium on Compound Semiconductors (ISCS)/23rd International Conference on Indium Phosphide and Related Materials (IPRM)/Compound Semiconductor Week
9(2).
- Abstract
- We have investigated epitaxial growth of InAs layers on 2 '' Si (111) substrates by Metalorganic Vapor Phase Epitaxy. Structural and morphological characterization results confirm high quality of the obtained thin layers. Then, we have utilized the InAs layers as substrates for InAs nanowire growth and Au nanoparticles were lithographically defined at various positions on the surface. Statistical analysis performed on the InAs nanowires grown on 2 '' substrates demonstrates our full control on the position, diameter and vertical alignment across the wafer. One possible device application of the aforementioned structure is wrap-gated Metal-Oxide-Semiconductor Field-Effect Transistors where the InAs layer is employed as the bottom contact... (More)
- We have investigated epitaxial growth of InAs layers on 2 '' Si (111) substrates by Metalorganic Vapor Phase Epitaxy. Structural and morphological characterization results confirm high quality of the obtained thin layers. Then, we have utilized the InAs layers as substrates for InAs nanowire growth and Au nanoparticles were lithographically defined at various positions on the surface. Statistical analysis performed on the InAs nanowires grown on 2 '' substrates demonstrates our full control on the position, diameter and vertical alignment across the wafer. One possible device application of the aforementioned structure is wrap-gated Metal-Oxide-Semiconductor Field-Effect Transistors where the InAs layer is employed as the bottom contact and the InAs nanowires act as channel materials. [GRAPHICS] SEM image of part of epitaxially grown InAs nanowires on the InAs layer on 2" Si substrate. The scale bar is 50 mu m. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/2494900
- author
- Gorji, Sepideh
LU
; Johansson, Sofia
LU
; Borg, Mattias
LU
; Dick Thelander, Kimberly
LU
and Wernersson, Lars-Erik
LU
- organization
- publishing date
- 2012
- type
- Chapter in Book/Report/Conference proceeding
- publication status
- published
- subject
- keywords
- InAs, nanowire, MOSFET
- host publication
- physica status solidi (c)
- volume
- 9
- issue
- 2
- publisher
- Wiley-Blackwell
- conference name
- 38th International Symposium on Compound Semiconductors (ISCS)/23rd International Conference on Indium Phosphide and Related Materials (IPRM)/Compound Semiconductor Week
- conference location
- Berlin, Germany
- conference dates
- 2011-05-22 - 2011-05-26
- external identifiers
-
- wos:000301540900013
- scopus:84856186467
- ISSN
- 1610-1642
- 1862-6351
- DOI
- 10.1002/pssc.201100258
- language
- English
- LU publication?
- yes
- additional info
- The information about affiliations in this record was updated in December 2015. The record was previously connected to the following departments: Solid State Physics (011013006), Electrical and information technology (011041010), Polymer and Materials Chemistry (LTH) (011001041)
- id
- d038cae5-df7f-46e6-b84e-39bb4a79c614 (old id 2494900)
- date added to LUP
- 2016-04-01 10:37:32
- date last changed
- 2024-01-06 21:10:18
@inproceedings{d038cae5-df7f-46e6-b84e-39bb4a79c614,
abstract = {{We have investigated epitaxial growth of InAs layers on 2 '' Si (111) substrates by Metalorganic Vapor Phase Epitaxy. Structural and morphological characterization results confirm high quality of the obtained thin layers. Then, we have utilized the InAs layers as substrates for InAs nanowire growth and Au nanoparticles were lithographically defined at various positions on the surface. Statistical analysis performed on the InAs nanowires grown on 2 '' substrates demonstrates our full control on the position, diameter and vertical alignment across the wafer. One possible device application of the aforementioned structure is wrap-gated Metal-Oxide-Semiconductor Field-Effect Transistors where the InAs layer is employed as the bottom contact and the InAs nanowires act as channel materials. [GRAPHICS] SEM image of part of epitaxially grown InAs nanowires on the InAs layer on 2" Si substrate. The scale bar is 50 mu m. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim}},
author = {{Gorji, Sepideh and Johansson, Sofia and Borg, Mattias and Dick Thelander, Kimberly and Wernersson, Lars-Erik}},
booktitle = {{physica status solidi (c)}},
issn = {{1610-1642}},
keywords = {{InAs; nanowire; MOSFET}},
language = {{eng}},
number = {{2}},
publisher = {{Wiley-Blackwell}},
title = {{Highly controlled InAs nanowires on Si(111) wafers by MOVPE}},
url = {{http://dx.doi.org/10.1002/pssc.201100258}},
doi = {{10.1002/pssc.201100258}},
volume = {{9}},
year = {{2012}},
}