Nanoimprint technology for fabrication of three-terminal ballistic junction devices in GaInAs/InP
(2003) In Microelectronic Engineering 67-8. p.196-202- Abstract
- We present processing technology based on nanoimprint lithography (NIL) and wet etching for fabrication of GaInAs/InP three-terminal ballistic junction (TBJ) devices. To transfer sub-100 nm features into a high-mobility InP-based 2DEG material, we used SiO2/Si stamps made with electron beam lithography and reactive ion etching. After the NIL, the resist residues are removed in oxygen plasma followed by wet etching of GaInAs/InP to define the M-structures. Fabricated TBJ-devices are characterized using scanning electron microscopy and electron transport measurements. Highly non-linear electrical characteristics of the TBJ structures are demonstrated and compared with E-beam defined devices. (C) 2003 Elsevier Science B.V. All rights reserved.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/307038
- author
- organization
- publishing date
- 2003
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- nanoimprint lithography, GaInAs/InP, three-terminal ballistic junction
- in
- Microelectronic Engineering
- volume
- 67-8
- pages
- 196 - 202
- publisher
- Elsevier
- external identifiers
-
- wos:000183842100027
- scopus:0038359142
- ISSN
- 1873-5568
- DOI
- 10.1016/S0167-9317(03)00071-6
- language
- English
- LU publication?
- yes
- id
- af8c0ee5-da23-4cac-bf50-619cc1848a54 (old id 307038)
- date added to LUP
- 2016-04-01 12:16:43
- date last changed
- 2022-04-21 05:15:07
@article{af8c0ee5-da23-4cac-bf50-619cc1848a54, abstract = {{We present processing technology based on nanoimprint lithography (NIL) and wet etching for fabrication of GaInAs/InP three-terminal ballistic junction (TBJ) devices. To transfer sub-100 nm features into a high-mobility InP-based 2DEG material, we used SiO2/Si stamps made with electron beam lithography and reactive ion etching. After the NIL, the resist residues are removed in oxygen plasma followed by wet etching of GaInAs/InP to define the M-structures. Fabricated TBJ-devices are characterized using scanning electron microscopy and electron transport measurements. Highly non-linear electrical characteristics of the TBJ structures are demonstrated and compared with E-beam defined devices. (C) 2003 Elsevier Science B.V. All rights reserved.}}, author = {{Maximov, Ivan and Carlberg, Patrick and Shorubalko, Ivan and Wallin, Daniel and Sarwe, Eva-Lena and Beck, Marc and Graczyk, Mariusz and Seifert, Werner and Xu, Hongqi and Montelius, Lars and Samuelson, Lars}}, issn = {{1873-5568}}, keywords = {{nanoimprint lithography; GaInAs/InP; three-terminal ballistic junction}}, language = {{eng}}, pages = {{196--202}}, publisher = {{Elsevier}}, series = {{Microelectronic Engineering}}, title = {{Nanoimprint technology for fabrication of three-terminal ballistic junction devices in GaInAs/InP}}, url = {{http://dx.doi.org/10.1016/S0167-9317(03)00071-6}}, doi = {{10.1016/S0167-9317(03)00071-6}}, volume = {{67-8}}, year = {{2003}}, }