Surface and core contribution to 1/f-noise in InAs nanowire metal-oxide-semiconductor field-effect transistors
(2013) In Applied Physics Letters 103(3).- Abstract
- By measuring 1/f-noise in wrap-gated InAs nanowire metal-oxide-semiconductor field-effect transistors with transport dominating, controllably, in either an inner, core channel, or an outer, surface channel, it is possible to accurately evaluate the material quality related Hooge-parameter, alpha(H), with reduced interference from the surface properties. The devices show low values of alpha(H) similar to 4 x 10(-5). At forward bias, where the data suggest that the 1/f-noise is dominated by the contribution from the high-k interface, devices show low values of normalized noise spectral density. (C) 2013 AIP Publishing LLC.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/4043073
- author
- Persson, Karl-Magnus LU ; Malm, B. G. and Wernersson, Lars-Erik LU
- organization
- publishing date
- 2013
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- Nanowire, Noise, mobility fluctuations, number fluctutations, InAs, Transistor, MOSFET, FET, high-k, hf02, al203
- in
- Applied Physics Letters
- volume
- 103
- issue
- 3
- article number
- 033508
- publisher
- American Institute of Physics (AIP)
- external identifiers
-
- wos:000322146300110
- scopus:84881492355
- ISSN
- 0003-6951
- DOI
- 10.1063/1.4813850
- project
- EIT_WWW Wireless with Wires
- language
- English
- LU publication?
- yes
- id
- 076ed1c9-e573-4779-a934-a6c4817ae792 (old id 4043073)
- alternative location
- http://ieeexplore.ieee.org/Xplore/defdeny.jsp?url=http%3A%2F%2Fieeexplore.ieee.org%2Fstamp%2Fstamp.jsp%3Ftp%3D%26arnumber%3D6560855%26userType%3Dinst&denyReason=-133&arnumber=6560855&productsMatched=null&userType=inst
- date added to LUP
- 2016-04-01 11:07:24
- date last changed
- 2023-11-10 13:00:38
@article{076ed1c9-e573-4779-a934-a6c4817ae792, abstract = {{By measuring 1/f-noise in wrap-gated InAs nanowire metal-oxide-semiconductor field-effect transistors with transport dominating, controllably, in either an inner, core channel, or an outer, surface channel, it is possible to accurately evaluate the material quality related Hooge-parameter, alpha(H), with reduced interference from the surface properties. The devices show low values of alpha(H) similar to 4 x 10(-5). At forward bias, where the data suggest that the 1/f-noise is dominated by the contribution from the high-k interface, devices show low values of normalized noise spectral density. (C) 2013 AIP Publishing LLC.}}, author = {{Persson, Karl-Magnus and Malm, B. G. and Wernersson, Lars-Erik}}, issn = {{0003-6951}}, keywords = {{Nanowire; Noise; mobility fluctuations; number fluctutations; InAs; Transistor; MOSFET; FET; high-k; hf02; al203}}, language = {{eng}}, number = {{3}}, publisher = {{American Institute of Physics (AIP)}}, series = {{Applied Physics Letters}}, title = {{Surface and core contribution to 1/f-noise in InAs nanowire metal-oxide-semiconductor field-effect transistors}}, url = {{https://lup.lub.lu.se/search/files/2398051/4330777.pdf}}, doi = {{10.1063/1.4813850}}, volume = {{103}}, year = {{2013}}, }