In situ characterization of the deposition of anatase TiO<sub>2</sub> on rutile TiO<sub>2</sub>(110)

Head, Ashley R.; Johansson, Niclas; Niu, Yuran; Snezhkova, Olesia; Chaudhary, Shilpi; Schnadt, Joachim; Bluhm, Hendrik; Chen, Chaoyu; Avila, José; Asensio, Maria Carmen

In situ characterization of the deposition of anatase TiO₂ on rutile TiO₂(110)

Mark

Head, Ashley R. ^LU ; Johansson, Niclas ^LU ; Niu, Yuran ^LU ; Snezhkova, Olesia ^LU ; Chaudhary, Shilpi ^LU ; Schnadt, Joachim ^LU

; Bluhm, Hendrik ; Chen, Chaoyu ; Avila, José and Asensio, Maria Carmen (2018) In Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films 36(2).

Abstract: Growing additional TiO₂ thin films on TiO₂ supstrates in ultrahigh vacuum (UHV)-compatible chambers have many applications for sample preparation, such as smoothing surface morphologies, templating, and covering impurities. However, there has been little study into how to control the morphology of TiO₂ films deposited onto TiO₂ supstrates, especially using atomic layer deposition (ALD) precursors. Here, the authors show the growth of a TiO₂ film on a rutile TiO₂(110) surface using titanium tetraisopropoxide (TTIP) and water as the precursors at pressures well below those used in common ALD reactors. X-ray absorption spectroscopy suggests that the relatively low sample... (More); Growing additional TiO₂ thin films on TiO₂ supstrates in ultrahigh vacuum (UHV)-compatible chambers have many applications for sample preparation, such as smoothing surface morphologies, templating, and covering impurities. However, there has been little study into how to control the morphology of TiO₂ films deposited onto TiO₂ supstrates, especially using atomic layer deposition (ALD) precursors. Here, the authors show the growth of a TiO₂ film on a rutile TiO₂(110) surface using titanium tetraisopropoxide (TTIP) and water as the precursors at pressures well below those used in common ALD reactors. X-ray absorption spectroscopy suggests that the relatively low sample temperature (175 °C) results in an anatase film despite the rutile template of the supstrate. Using ambient pressure x-ray photoelectron spectroscopy, the adsorption of TTIP was found to be self-limiting, even at room temperature. No molecular water was found to adsorb on the surface. The deposited thickness suggests that an alternate chemical vapor deposition growth mechanism may be dominating the growth process. This study highlights the possibility that metal oxide film deposition from molecular precursors is an option for sample preparations in common UHV-compatible chambers.
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Please use this url to cite or link to this publication: https://lup.lub.lu.se/record/5c7d513a-e072-4563-93a4-a8441ba7dc84

author

Head, Ashley R. ^LU ; Johansson, Niclas ^LU ; Niu, Yuran ^LU ; Snezhkova, Olesia ^LU ; Chaudhary, Shilpi ^LU ; Schnadt, Joachim ^LU

; Bluhm, Hendrik ; Chen, Chaoyu ; Avila, José and Asensio, Maria Carmen

organization

publishing date

2018-03-01

type

Contribution to journal

publication status

published

subject

in

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

volume

36

issue

2

article number

02D405

publisher

American Institute of Physics (AIP)

external identifiers

scopus:85042703172

ISSN

0734-2101

DOI

10.1116/1.5005533

language

English

LU publication?

yes

id

5c7d513a-e072-4563-93a4-a8441ba7dc84

date added to LUP

2018-03-19 10:51:52

date last changed

2022-04-25 06:21:30

@article{5c7d513a-e072-4563-93a4-a8441ba7dc84,
  abstract     = {{<p>Growing additional TiO<sub>2</sub> thin films on TiO<sub>2</sub> supstrates in ultrahigh vacuum (UHV)-compatible chambers have many applications for sample preparation, such as smoothing surface morphologies, templating, and covering impurities. However, there has been little study into how to control the morphology of TiO<sub>2</sub> films deposited onto TiO<sub>2</sub> supstrates, especially using atomic layer deposition (ALD) precursors. Here, the authors show the growth of a TiO<sub>2</sub> film on a rutile TiO<sub>2</sub>(110) surface using titanium tetraisopropoxide (TTIP) and water as the precursors at pressures well below those used in common ALD reactors. X-ray absorption spectroscopy suggests that the relatively low sample temperature (175 °C) results in an anatase film despite the rutile template of the supstrate. Using ambient pressure x-ray photoelectron spectroscopy, the adsorption of TTIP was found to be self-limiting, even at room temperature. No molecular water was found to adsorb on the surface. The deposited thickness suggests that an alternate chemical vapor deposition growth mechanism may be dominating the growth process. This study highlights the possibility that metal oxide film deposition from molecular precursors is an option for sample preparations in common UHV-compatible chambers.</p>}},
  author       = {{Head, Ashley R. and Johansson, Niclas and Niu, Yuran and Snezhkova, Olesia and Chaudhary, Shilpi and Schnadt, Joachim and Bluhm, Hendrik and Chen, Chaoyu and Avila, José and Asensio, Maria Carmen}},
  issn         = {{0734-2101}},
  language     = {{eng}},
  month        = {{03}},
  number       = {{2}},
  publisher    = {{American Institute of Physics (AIP)}},
  series       = {{Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films}},
  title        = {{In situ characterization of the deposition of anatase TiO<sub>2</sub> on rutile TiO<sub>2</sub>(110)}},
  url          = {{http://dx.doi.org/10.1116/1.5005533}},
  doi          = {{10.1116/1.5005533}},
  volume       = {{36}},
  year         = {{2018}},
}

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In situ characterization of the deposition of anatase TiO₂ on rutile TiO₂(110)