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15 nm diameter InAs nanowire MOSFETs

Dey, Anil LU ; Thelander, Claes LU ; Borgström, Magnus LU ; Borg, Mattias LU ; Lind, Erik LU and Wernersson, Lars-Erik LU (2011) Device Research Conference (DRC), 2011 69th Annual In [Host publication title missing] p.21-22
Abstract
InAs is an attractive channel material for III–V nanowire MOSFETs and early prototype high performance nanowire transistors have been demonstrated1. As the gate length is reduced, the nanowire diameter must be scaled quite aggressively in order to suppress short-channel effects2. However, a reduction in transconductance (gm) and drive current (ION) could be expected due to increased surface scattering for thin wires. We present data for the device properties of thin InAs nanowires, with diameters in the 15 nm range, and investigate possible improvements of the performance focusing on transistor applications. In order to boost ION, the source and drain resistance need to be reduced. Several doping sources were therefore evaluated in the... (More)
InAs is an attractive channel material for III–V nanowire MOSFETs and early prototype high performance nanowire transistors have been demonstrated1. As the gate length is reduced, the nanowire diameter must be scaled quite aggressively in order to suppress short-channel effects2. However, a reduction in transconductance (gm) and drive current (ION) could be expected due to increased surface scattering for thin wires. We present data for the device properties of thin InAs nanowires, with diameters in the 15 nm range, and investigate possible improvements of the performance focusing on transistor applications. In order to boost ION, the source and drain resistance need to be reduced. Several doping sources were therefore evaluated in the study, among them selenium (Se), tin (Sn) and sulphur (S) to form n-i-n structures. We report very high current densities, up to 33 MA/cm2, comparable to modern HEMTs3, and a normalized transconductance of 1.8 S/mm for a nanowire with an intrinsic segment of nominally 150 nm and a diameter of 15 nm. (Less)
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author
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
in
[Host publication title missing]
pages
2 pages
conference name
Device Research Conference (DRC), 2011 69th Annual
external identifiers
  • Scopus:84880753856
ISSN
1548-3770
DOI
10.1109/DRC.2011.5994403
language
English
LU publication?
yes
id
b69383c1-cc9f-4f6a-9abe-78bbff668cf4 (old id 2158616)
date added to LUP
2011-09-19 12:24:44
date last changed
2016-10-13 04:28:00
@misc{b69383c1-cc9f-4f6a-9abe-78bbff668cf4,
  abstract     = {InAs is an attractive channel material for III–V nanowire MOSFETs and early prototype high performance nanowire transistors have been demonstrated1. As the gate length is reduced, the nanowire diameter must be scaled quite aggressively in order to suppress short-channel effects2. However, a reduction in transconductance (gm) and drive current (ION) could be expected due to increased surface scattering for thin wires. We present data for the device properties of thin InAs nanowires, with diameters in the 15 nm range, and investigate possible improvements of the performance focusing on transistor applications. In order to boost ION, the source and drain resistance need to be reduced. Several doping sources were therefore evaluated in the study, among them selenium (Se), tin (Sn) and sulphur (S) to form n-i-n structures. We report very high current densities, up to 33 MA/cm2, comparable to modern HEMTs3, and a normalized transconductance of 1.8 S/mm for a nanowire with an intrinsic segment of nominally 150 nm and a diameter of 15 nm.},
  author       = {Dey, Anil and Thelander, Claes and Borgström, Magnus and Borg, Mattias and Lind, Erik and Wernersson, Lars-Erik},
  issn         = {1548-3770},
  language     = {eng},
  pages        = {21--22},
  series       = {[Host publication title missing]},
  title        = {15 nm diameter InAs nanowire MOSFETs},
  url          = {http://dx.doi.org/10.1109/DRC.2011.5994403},
  year         = {2011},
}