Vertically Processed GaInP/InP Tandem-Junction Nanowire Solar Cells
(2024) In ACS Applied Nano Materials 7(2). p.2352-2358- Abstract
We present vertically processed photovoltaic devices based on GaInP/InP tandem-junction III-V nanowires (NWs), contacting approximately 3 million NWs in parallel for each device. The GaInP and InP subcells as well as the connecting Esaki tunnel diode are all realized within the same NW. By processing GaInP/InP tandem-junction NW solar cells with varying compositions of the top junction GaInP material, we investigate the impact of the GaInP composition on the device performance. External quantum efficiency (EQE) measurements on devices with varying GaInP composition provide insights into the performance of the respective subcells, revealing that the GaInP subcell is current-limiting for all devices. I-V measurements under AM1.5G... (More)
We present vertically processed photovoltaic devices based on GaInP/InP tandem-junction III-V nanowires (NWs), contacting approximately 3 million NWs in parallel for each device. The GaInP and InP subcells as well as the connecting Esaki tunnel diode are all realized within the same NW. By processing GaInP/InP tandem-junction NW solar cells with varying compositions of the top junction GaInP material, we investigate the impact of the GaInP composition on the device performance. External quantum efficiency (EQE) measurements on devices with varying GaInP composition provide insights into the performance of the respective subcells, revealing that the GaInP subcell is current-limiting for all devices. I-V measurements under AM1.5G illumination confirm voltage addition of the subcells, resulting in an open-circuit voltage of up to 1.91 V. However, the short-circuit current density is low, ranging between 0.24 and 3.44 mA/cm2, which leads to a resulting solar conversion efficiency of up to 3.60%. Our work shows a path forward toward high-efficiency NW photovoltaics and identifies critical issues that need improvement.
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- author
- Alcer, David LU ; Tirrito, Matteo LU ; Hrachowina, Lukas LU and Borgström, Magnus T. LU
- organization
- publishing date
- 2024-01-26
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- GaInP, InP, nanowire solar cell, photovoltaics, tandem junction
- in
- ACS Applied Nano Materials
- volume
- 7
- issue
- 2
- pages
- 7 pages
- publisher
- The American Chemical Society (ACS)
- external identifiers
-
- pmid:38298252
- scopus:85182560828
- ISSN
- 2574-0970
- DOI
- 10.1021/acsanm.3c05909
- language
- English
- LU publication?
- yes
- id
- 13bab6c9-8d49-4282-8447-9d2af6834773
- date added to LUP
- 2024-02-15 10:53:41
- date last changed
- 2024-10-16 05:27:31
@article{13bab6c9-8d49-4282-8447-9d2af6834773, abstract = {{<p>We present vertically processed photovoltaic devices based on GaInP/InP tandem-junction III-V nanowires (NWs), contacting approximately 3 million NWs in parallel for each device. The GaInP and InP subcells as well as the connecting Esaki tunnel diode are all realized within the same NW. By processing GaInP/InP tandem-junction NW solar cells with varying compositions of the top junction GaInP material, we investigate the impact of the GaInP composition on the device performance. External quantum efficiency (EQE) measurements on devices with varying GaInP composition provide insights into the performance of the respective subcells, revealing that the GaInP subcell is current-limiting for all devices. I-V measurements under AM1.5G illumination confirm voltage addition of the subcells, resulting in an open-circuit voltage of up to 1.91 V. However, the short-circuit current density is low, ranging between 0.24 and 3.44 mA/cm<sup>2</sup>, which leads to a resulting solar conversion efficiency of up to 3.60%. Our work shows a path forward toward high-efficiency NW photovoltaics and identifies critical issues that need improvement.</p>}}, author = {{Alcer, David and Tirrito, Matteo and Hrachowina, Lukas and Borgström, Magnus T.}}, issn = {{2574-0970}}, keywords = {{GaInP; InP; nanowire solar cell; photovoltaics; tandem junction}}, language = {{eng}}, month = {{01}}, number = {{2}}, pages = {{2352--2358}}, publisher = {{The American Chemical Society (ACS)}}, series = {{ACS Applied Nano Materials}}, title = {{Vertically Processed GaInP/InP Tandem-Junction Nanowire Solar Cells}}, url = {{http://dx.doi.org/10.1021/acsanm.3c05909}}, doi = {{10.1021/acsanm.3c05909}}, volume = {{7}}, year = {{2024}}, }