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Epitaxially grown GaP/GaAs1-xPx/GaP double heterostructure nanowires for optical applications

Svensson, CPT ; Seifert, Werner LU ; Larsson, Magnus LU orcid ; Wallenberg, Reine LU ; Stangl, J ; Bauer, G and Samuelson, Lars LU (2005) In Nanotechnology 16(6). p.936-939
Abstract
We demonstrate metal organic vapour phase epitaxy growth of GaP/GaAs1-xPx/GaP double heterostructure nanowires on GaP(111)B, and report bright photoluminescence at room temperature. By using different PH3 to AsH3 flow ratios during growth of the GaAs1-xPx segment, we are able to control the composition of the segment, making it feasible to tune the wavelength of the emitted light. A photoluminescence system was employed to characterize the luminescence, and x-ray energy dispersive spectrometry and x-ray diffraction studies were used to investigate the composition of the segment. These double heterostructure nanowires could in the future be used in optoelectronic devices and as multi pie-wavelength fluorescent markers for biomedical... (More)
We demonstrate metal organic vapour phase epitaxy growth of GaP/GaAs1-xPx/GaP double heterostructure nanowires on GaP(111)B, and report bright photoluminescence at room temperature. By using different PH3 to AsH3 flow ratios during growth of the GaAs1-xPx segment, we are able to control the composition of the segment, making it feasible to tune the wavelength of the emitted light. A photoluminescence system was employed to characterize the luminescence, and x-ray energy dispersive spectrometry and x-ray diffraction studies were used to investigate the composition of the segment. These double heterostructure nanowires could in the future be used in optoelectronic devices and as multi pie-wavelength fluorescent markers for biomedical applications. (Less)
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author
; ; ; ; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Nanotechnology
volume
16
issue
6
pages
936 - 939
publisher
IOP Publishing
external identifiers
  • wos:000230144700052
  • scopus:18744377170
ISSN
0957-4484
DOI
10.1088/0957-4484/16/6/052
language
English
LU publication?
yes
additional info
The information about affiliations in this record was updated in December 2015. The record was previously connected to the following departments: Solid State Physics (011013006), Polymer and Materials Chemistry (LTH) (011001041)
id
abd55b3f-3a27-49fd-967c-9cd2fa8aad59 (old id 152189)
date added to LUP
2016-04-01 11:57:18
date last changed
2025-10-14 10:40:30
@article{abd55b3f-3a27-49fd-967c-9cd2fa8aad59,
  abstract     = {{We demonstrate metal organic vapour phase epitaxy growth of GaP/GaAs1-xPx/GaP double heterostructure nanowires on GaP(111)B, and report bright photoluminescence at room temperature. By using different PH3 to AsH3 flow ratios during growth of the GaAs1-xPx segment, we are able to control the composition of the segment, making it feasible to tune the wavelength of the emitted light. A photoluminescence system was employed to characterize the luminescence, and x-ray energy dispersive spectrometry and x-ray diffraction studies were used to investigate the composition of the segment. These double heterostructure nanowires could in the future be used in optoelectronic devices and as multi pie-wavelength fluorescent markers for biomedical applications.}},
  author       = {{Svensson, CPT and Seifert, Werner and Larsson, Magnus and Wallenberg, Reine and Stangl, J and Bauer, G and Samuelson, Lars}},
  issn         = {{0957-4484}},
  language     = {{eng}},
  number       = {{6}},
  pages        = {{936--939}},
  publisher    = {{IOP Publishing}},
  series       = {{Nanotechnology}},
  title        = {{Epitaxially grown GaP/GaAs1-xPx/GaP double heterostructure nanowires for optical applications}},
  url          = {{http://dx.doi.org/10.1088/0957-4484/16/6/052}},
  doi          = {{10.1088/0957-4484/16/6/052}},
  volume       = {{16}},
  year         = {{2005}},
}