Nanostructures for Optoelectronics : Device Fabrication and Characterization
(2018)- Abstract
The nanoscale is an exciting domain
when it comes to crystal growth, light-matter interaction and electronics. Especially
for optoelectronics, semiconductor nanostructures have many advantages compared
to traditional planar structures and are highly interesting for the next
generation of solar cells, photodetectors and light emitting diodes. This
dissertation explores device fabrication, and electrical and electro-optical
characterization of semiconductor nanostructures, with an emphasis on materials
and structures suitable for optoelectronics.
The first part gives an overview of nanowire synthesis, doping
and current challenges... (More)The nanoscale is an exciting domain
when it comes to crystal growth, light-matter interaction and electronics. Especially
for optoelectronics, semiconductor nanostructures have many advantages compared
to traditional planar structures and are highly interesting for the next
generation of solar cells, photodetectors and light emitting diodes. This
dissertation explores device fabrication, and electrical and electro-optical
characterization of semiconductor nanostructures, with an emphasis on materials
and structures suitable for optoelectronics.
The first part gives an overview of nanowire synthesis, doping
and current challenges in the field.
The second part describes doping characterization at the
nanoscale using electrical measurement techniques. A fabrication scheme for making
nanowire devices for Hall effect characterization and field-effect
characterization is presented. Methods for simulating electric transport in
nanowires to analyze measurements and determine doping concentration from Hall
and field-effect measurements are discussed. Doping incorporation in InP
core-shell nanowires is studied with Hall effect and correlated to optical characterization
techniques. An experimental comparison between nanowire Hall effect
measurements and field-effect measurements is presented. A three-probe device
geometry to simplify Hall effect measurements is suggested and experimentally
verified. Hall measurements are performed on nanowire-based
platelet-structures.
The last part of the dissertation describes fabrication and
(Less)
characterization of nanoscale optoelectronic devices. Nanowires with p-n
junctions synthesized using the high-throughput and substrate-less Aerotaxy
method are characterized and shown to have promising properties. Finally,
fabrication and electro-optical characterization of nitride platelet LEDs with
emission from UV to red is presented.
- author
- Hultin, Olof LU
- supervisor
-
- Lars Samuelson LU
- Kristian Storm LU
- Magnus Borgström LU
- Mikael Björk LU
- opponent
-
- Dr Riess, Walter, IBM Research - Zürich, Switzerland
- organization
- publishing date
- 2018-04-18
- type
- Thesis
- publication status
- published
- subject
- keywords
- Fysicumarkivet A:2018:Hultin
- publisher
- Division of Solid State Physics, Department of Physics, Lund University, Box 118, SE-221 00 Lund, Sweden,
- defense location
- Rydbergsalen, Fysicum, Sölvegatan 14, Lund University, Faculty of Engineering LTH.
- defense date
- 2018-05-18 09:15:00
- ISBN
- 978-91-7753-658-1
- 978-91-7753-657-4
- language
- English
- LU publication?
- yes
- id
- 277245ea-8488-4cbb-860a-a77ced6e376b
- date added to LUP
- 2018-04-18 15:54:55
- date last changed
- 2019-05-14 09:51:08
@phdthesis{277245ea-8488-4cbb-860a-a77ced6e376b,
abstract = {{<p class="bodytext2" style="text-indent:0cm">The nanoscale is an exciting domain<br>
when it comes to crystal growth, light-matter interaction and electronics. Especially<br>
for optoelectronics, semiconductor nanostructures have many advantages compared<br>
to traditional planar structures and are highly interesting for the next<br>
generation of solar cells, photodetectors and light emitting diodes. This<br>
dissertation explores device fabrication, and electrical and electro-optical<br>
characterization of semiconductor nanostructures, with an emphasis on materials<br>
and structures suitable for optoelectronics. </p><br>
<br>
<p class="bodytext2">The first part gives an overview of nanowire synthesis, doping<br>
and current challenges in the field. </p><br>
<br>
<p class="bodytext2">The second part describes doping characterization at the<br>
nanoscale using electrical measurement techniques. A fabrication scheme for making<br>
nanowire devices for Hall effect characterization and field-effect<br>
characterization is presented. Methods for simulating electric transport in<br>
nanowires to analyze measurements and determine doping concentration from Hall<br>
and field-effect measurements are discussed. Doping incorporation in InP<br>
core-shell nanowires is studied with Hall effect and correlated to optical characterization<br>
techniques. An experimental comparison between nanowire Hall effect<br>
measurements and field-effect measurements is presented. A three-probe device<br>
geometry to simplify Hall effect measurements is suggested and experimentally<br>
verified. Hall measurements are performed on nanowire-based<br>
platelet-structures.</p><br>
<br>
<p class="bodytext2">The last part of the dissertation describes fabrication and<br>
characterization of nanoscale optoelectronic devices. Nanowires with p-n<br>
junctions synthesized using the high-throughput and substrate-less Aerotaxy<br>
method are characterized and shown to have promising properties. Finally,<br>
fabrication and electro-optical characterization of nitride platelet LEDs with<br>
emission from UV to red is presented.</p>}},
author = {{Hultin, Olof}},
isbn = {{978-91-7753-658-1}},
keywords = {{Fysicumarkivet A:2018:Hultin}},
language = {{eng}},
month = {{04}},
publisher = {{Division of Solid State Physics, Department of Physics, Lund University, Box 118, SE-221 00 Lund, Sweden,}},
school = {{Lund University}},
title = {{Nanostructures for Optoelectronics : Device Fabrication and Characterization}},
url = {{https://lup.lub.lu.se/search/files/41765013/Dissertation_Olof_Hultin_LUCRIS.pdf}},
year = {{2018}},
}