Skip to main content

Lund University Publications

LUND UNIVERSITY LIBRARIES

Size- and shape-controlled GaAs nano-whiskers grown by MOVPE: a growth study

Borgström, Magnus LU ; Deppert, Knut LU orcid ; Samuelson, Lars LU and Seifert, Werner LU (2004) In Journal of Crystal Growth 260(1-2). p.18-22
Abstract
We have investigated the Au-catalyzed GaAs <111 > B whisker growth under low-pressure metal-organic vapour phase epitaxy conditions. By varying the growth temperature we found a maximum in the whisker growth rate at about 450-475degreesC. With increasing temperature the growth rate decreases due to competing growth at the (111) substrate surface and at the {I 101 whisker side facets, which leads to significant tapering of the whiskers. For low temperatures, the growth rate R in the In R = f (1/T)-plot results in an Arrhenius activation energy of about 67-75 kJ/mol, a value which is in agreement with activation energies reported for low-temperature planar growth of GaAs from TMG and AsH3. The Au acts as a local catalyst and as a... (More)
We have investigated the Au-catalyzed GaAs <111 > B whisker growth under low-pressure metal-organic vapour phase epitaxy conditions. By varying the growth temperature we found a maximum in the whisker growth rate at about 450-475degreesC. With increasing temperature the growth rate decreases due to competing growth at the (111) substrate surface and at the {I 101 whisker side facets, which leads to significant tapering of the whiskers. For low temperatures, the growth rate R in the In R = f (1/T)-plot results in an Arrhenius activation energy of about 67-75 kJ/mol, a value which is in agreement with activation energies reported for low-temperature planar growth of GaAs from TMG and AsH3. The Au acts as a local catalyst and as a collector of reactants, enabling a liquid-phase-epitaxy-like growth with high growth rates at the GaAs (111)B/(Au,Ga) interface. (Less)
Please use this url to cite or link to this publication:
author
; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
materials, semiconducting III-V, nanostructures, metalorganic vapor phase epitaxy
in
Journal of Crystal Growth
volume
260
issue
1-2
pages
18 - 22
publisher
Elsevier
external identifiers
  • wos:000187730000004
  • scopus:0242523149
ISSN
0022-0248
DOI
10.1016/j.jcrysgro.2003.08.009
language
English
LU publication?
yes
id
ee26dd43-70ad-4435-87a4-fbdf367ae2e9 (old id 291014)
date added to LUP
2016-04-01 16:53:52
date last changed
2022-03-22 21:57:06
@article{ee26dd43-70ad-4435-87a4-fbdf367ae2e9,
  abstract     = {{We have investigated the Au-catalyzed GaAs &lt;111 &gt; B whisker growth under low-pressure metal-organic vapour phase epitaxy conditions. By varying the growth temperature we found a maximum in the whisker growth rate at about 450-475degreesC. With increasing temperature the growth rate decreases due to competing growth at the (111) substrate surface and at the {I 101 whisker side facets, which leads to significant tapering of the whiskers. For low temperatures, the growth rate R in the In R = f (1/T)-plot results in an Arrhenius activation energy of about 67-75 kJ/mol, a value which is in agreement with activation energies reported for low-temperature planar growth of GaAs from TMG and AsH3. The Au acts as a local catalyst and as a collector of reactants, enabling a liquid-phase-epitaxy-like growth with high growth rates at the GaAs (111)B/(Au,Ga) interface.}},
  author       = {{Borgström, Magnus and Deppert, Knut and Samuelson, Lars and Seifert, Werner}},
  issn         = {{0022-0248}},
  keywords     = {{materials; semiconducting III-V; nanostructures; metalorganic vapor phase epitaxy}},
  language     = {{eng}},
  number       = {{1-2}},
  pages        = {{18--22}},
  publisher    = {{Elsevier}},
  series       = {{Journal of Crystal Growth}},
  title        = {{Size- and shape-controlled GaAs nano-whiskers grown by MOVPE: a growth study}},
  url          = {{http://dx.doi.org/10.1016/j.jcrysgro.2003.08.009}},
  doi          = {{10.1016/j.jcrysgro.2003.08.009}},
  volume       = {{260}},
  year         = {{2004}},
}