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Nanoimprint technology for fabrication of three-terminal ballistic junction devices in GaInAs/InP

Maximov, Ivan LU ; Carlberg, Patrick LU ; Shorubalko, Ivan LU ; Wallin, Daniel LU ; Sarwe, Eva-Lena LU ; Beck, Marc LU ; Graczyk, Mariusz LU ; Seifert, Werner LU ; Xu, Hongqi LU and Montelius, Lars LU , et al. (2003) In Microelectronic Engineering 67-8. p.196-202
Abstract
We present processing technology based on nanoimprint lithography (NIL) and wet etching for fabrication of GaInAs/InP three-terminal ballistic junction (TBJ) devices. To transfer sub-100 nm features into a high-mobility InP-based 2DEG material, we used SiO2/Si stamps made with electron beam lithography and reactive ion etching. After the NIL, the resist residues are removed in oxygen plasma followed by wet etching of GaInAs/InP to define the M-structures. Fabricated TBJ-devices are characterized using scanning electron microscopy and electron transport measurements. Highly non-linear electrical characteristics of the TBJ structures are demonstrated and compared with E-beam defined devices. (C) 2003 Elsevier Science B.V. All rights reserved.
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organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
nanoimprint lithography, GaInAs/InP, three-terminal ballistic junction
in
Microelectronic Engineering
volume
67-8
pages
196 - 202
publisher
Elsevier
external identifiers
  • wos:000183842100027
  • scopus:0038359142
ISSN
1873-5568
DOI
10.1016/S0167-9317(03)00071-6
language
English
LU publication?
yes
id
af8c0ee5-da23-4cac-bf50-619cc1848a54 (old id 307038)
date added to LUP
2016-04-01 12:16:43
date last changed
2022-04-21 05:15:07
@article{af8c0ee5-da23-4cac-bf50-619cc1848a54,
  abstract     = {{We present processing technology based on nanoimprint lithography (NIL) and wet etching for fabrication of GaInAs/InP three-terminal ballistic junction (TBJ) devices. To transfer sub-100 nm features into a high-mobility InP-based 2DEG material, we used SiO2/Si stamps made with electron beam lithography and reactive ion etching. After the NIL, the resist residues are removed in oxygen plasma followed by wet etching of GaInAs/InP to define the M-structures. Fabricated TBJ-devices are characterized using scanning electron microscopy and electron transport measurements. Highly non-linear electrical characteristics of the TBJ structures are demonstrated and compared with E-beam defined devices. (C) 2003 Elsevier Science B.V. All rights reserved.}},
  author       = {{Maximov, Ivan and Carlberg, Patrick and Shorubalko, Ivan and Wallin, Daniel and Sarwe, Eva-Lena and Beck, Marc and Graczyk, Mariusz and Seifert, Werner and Xu, Hongqi and Montelius, Lars and Samuelson, Lars}},
  issn         = {{1873-5568}},
  keywords     = {{nanoimprint lithography; GaInAs/InP; three-terminal ballistic junction}},
  language     = {{eng}},
  pages        = {{196--202}},
  publisher    = {{Elsevier}},
  series       = {{Microelectronic Engineering}},
  title        = {{Nanoimprint technology for fabrication of three-terminal ballistic junction devices in GaInAs/InP}},
  url          = {{http://dx.doi.org/10.1016/S0167-9317(03)00071-6}},
  doi          = {{10.1016/S0167-9317(03)00071-6}},
  volume       = {{67-8}},
  year         = {{2003}},
}