A proposal to estimate homogeneous and inhomogeneous energy level broadening in double barrier resonant tunneling diodes
(2002) ISCS 2001 p.363-367- Abstract
- In this paper we proposed a method for evaluating a homogeneous broadening (DeltaE(h)) and inhomogeneous broadening (DeltaE(i)) of the resonant energy level width independently by using current-voltage characteristics in double barrier resonant tunneling diodes (DBRTDs). The line shape of the resonant energy broadening is assumed as a convolution of Lorentz function and a Gauss function. Measured transmittance in GaAs0.25P0.75/GaAs DBRTDs grown by MOCVD is well fit to the convolution function. The DeltaE(h), DeltaE(i) were estimated as 4.3[meV] and 1.0 [meV], respectively, where the measured energy-voltage conversion factor 17 is 0.3[eV/V].
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/324575
- author
- Suhara, M ; Ooki, S ; Wernersson, Lars-Erik LU ; Seifert, Werner LU ; Samuelson, Lars LU and Okumura, T
- organization
- publishing date
- 2002
- type
- Chapter in Book/Report/Conference proceeding
- publication status
- published
- subject
- host publication
- Compound Semiconductors 2001 (Institute of Physics Conference Series)
- issue
- 170
- pages
- 363 - 367
- publisher
- IOP Publishing
- conference name
- ISCS 2001
- conference location
- Tokyo, Japan
- conference dates
- 2001-10-01 - 2001-10-04
- external identifiers
-
- wos:000179011200059
- ISSN
- 0951-3248
- language
- English
- LU publication?
- yes
- id
- 18a5ddf1-75c6-4ee3-af02-a99a4056cb6a (old id 324575)
- date added to LUP
- 2016-04-01 16:49:45
- date last changed
- 2018-11-21 20:44:32
@inproceedings{18a5ddf1-75c6-4ee3-af02-a99a4056cb6a, abstract = {{In this paper we proposed a method for evaluating a homogeneous broadening (DeltaE(h)) and inhomogeneous broadening (DeltaE(i)) of the resonant energy level width independently by using current-voltage characteristics in double barrier resonant tunneling diodes (DBRTDs). The line shape of the resonant energy broadening is assumed as a convolution of Lorentz function and a Gauss function. Measured transmittance in GaAs0.25P0.75/GaAs DBRTDs grown by MOCVD is well fit to the convolution function. The DeltaE(h), DeltaE(i) were estimated as 4.3[meV] and 1.0 [meV], respectively, where the measured energy-voltage conversion factor 17 is 0.3[eV/V].}}, author = {{Suhara, M and Ooki, S and Wernersson, Lars-Erik and Seifert, Werner and Samuelson, Lars and Okumura, T}}, booktitle = {{Compound Semiconductors 2001 (Institute of Physics Conference Series)}}, issn = {{0951-3248}}, language = {{eng}}, number = {{170}}, pages = {{363--367}}, publisher = {{IOP Publishing}}, title = {{A proposal to estimate homogeneous and inhomogeneous energy level broadening in double barrier resonant tunneling diodes}}, year = {{2002}}, }