A novel frequency-multiplication device based on three-terminal ballistic junction
(2002) In IEEE Electron Device Letters 23(7). p.377-379- Abstract
- In this letter, a novel frequency-multiplication device based on a three-terminal ballistic junction is proposed and demonstrated. A 100 nm-size, three-terminal ballistic junction and a one-dimensional (1-D), lateral-field-effect transistor with trench gate-channel insulation are fabricated from high-electron-mobility GaInAs/InP quantum-well material as a single device. The devices show frequency doubling and gain at room temperature. The performance of these devices up to room temperature originates from the nature of the device functionality and the fact that the three-terminal device extensions are maintained below the carrier mean-free path. Furthermore, it is expected that the device performance can be extended up to THz-range.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/334170
- author
- Shorubalko, Ivan LU ; Xu, Hongqi LU ; Maximov, Ivan LU ; Nilsson, D ; Omling, Pär LU ; Samuelson, Lars LU and Seifert, Werner LU
- organization
- publishing date
- 2002
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- three-terminal ballistic, ballistic devices, frequency-multiplication, junctions
- in
- IEEE Electron Device Letters
- volume
- 23
- issue
- 7
- pages
- 377 - 379
- publisher
- IEEE - Institute of Electrical and Electronics Engineers Inc.
- external identifiers
-
- wos:000176491000001
- scopus:0036646338
- ISSN
- 0741-3106
- DOI
- 10.1109/LED.2002.1015202
- language
- English
- LU publication?
- yes
- id
- 7e8a7bfb-f01f-4632-94bd-5b58de291658 (old id 334170)
- date added to LUP
- 2016-04-01 15:58:47
- date last changed
- 2022-01-28 08:27:54
@article{7e8a7bfb-f01f-4632-94bd-5b58de291658, abstract = {{In this letter, a novel frequency-multiplication device based on a three-terminal ballistic junction is proposed and demonstrated. A 100 nm-size, three-terminal ballistic junction and a one-dimensional (1-D), lateral-field-effect transistor with trench gate-channel insulation are fabricated from high-electron-mobility GaInAs/InP quantum-well material as a single device. The devices show frequency doubling and gain at room temperature. The performance of these devices up to room temperature originates from the nature of the device functionality and the fact that the three-terminal device extensions are maintained below the carrier mean-free path. Furthermore, it is expected that the device performance can be extended up to THz-range.}}, author = {{Shorubalko, Ivan and Xu, Hongqi and Maximov, Ivan and Nilsson, D and Omling, Pär and Samuelson, Lars and Seifert, Werner}}, issn = {{0741-3106}}, keywords = {{three-terminal ballistic; ballistic devices; frequency-multiplication; junctions}}, language = {{eng}}, number = {{7}}, pages = {{377--379}}, publisher = {{IEEE - Institute of Electrical and Electronics Engineers Inc.}}, series = {{IEEE Electron Device Letters}}, title = {{A novel frequency-multiplication device based on three-terminal ballistic junction}}, url = {{http://dx.doi.org/10.1109/LED.2002.1015202}}, doi = {{10.1109/LED.2002.1015202}}, volume = {{23}}, year = {{2002}}, }