Current−Voltage Characterization of Individual As-Grown Nanowires Using a Scanning Tunneling Microscope
(2013) In Nano Letters 13(11). p.5182-5189- Abstract
- Utilizing semiconductor nanowires for (opto)- electronics requires exact knowledge of their current−voltage properties. We report accurate on-top imaging and I−V characterization of individual as-grown nanowires, using a subnanometer resolution scanning tunneling microscope with no need for additional microscopy tools, thus allowing versatile application. We form Ohmic contacts to InP and InAs nanowires without any sample processing, followed by quantitative measurements of diameter dependent I−V properties with a very small spread in measured values compared to standard techniques.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/4153268
- author
- Timm, Rainer LU ; Persson, Olof LU ; Engberg, David ; Fian, Alexander ; Webb, James LU ; Wallentin, Jesper LU ; Jönsson, Andreas ; Borgström, Magnus LU ; Samuelson, Lars LU and Mikkelsen, Anders LU
- organization
- publishing date
- 2013
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- semiconductor nanowire, scanning tunneling microscopy, Ohmic contact, nanowire contacts, resistivity
- in
- Nano Letters
- volume
- 13
- issue
- 11
- pages
- 5182 - 5189
- publisher
- The American Chemical Society (ACS)
- external identifiers
-
- wos:000327111700031
- scopus:84887847197
- pmid:24059470
- ISSN
- 1530-6992
- DOI
- 10.1021/nl402570u
- language
- English
- LU publication?
- yes
- id
- 99564106-9802-4028-97e4-ec7b86bee26f (old id 4153268)
- date added to LUP
- 2016-04-01 15:04:23
- date last changed
- 2023-09-17 23:03:15
@article{99564106-9802-4028-97e4-ec7b86bee26f, abstract = {{Utilizing semiconductor nanowires for (opto)- electronics requires exact knowledge of their current−voltage properties. We report accurate on-top imaging and I−V characterization of individual as-grown nanowires, using a subnanometer resolution scanning tunneling microscope with no need for additional microscopy tools, thus allowing versatile application. We form Ohmic contacts to InP and InAs nanowires without any sample processing, followed by quantitative measurements of diameter dependent I−V properties with a very small spread in measured values compared to standard techniques.}}, author = {{Timm, Rainer and Persson, Olof and Engberg, David and Fian, Alexander and Webb, James and Wallentin, Jesper and Jönsson, Andreas and Borgström, Magnus and Samuelson, Lars and Mikkelsen, Anders}}, issn = {{1530-6992}}, keywords = {{semiconductor nanowire; scanning tunneling microscopy; Ohmic contact; nanowire contacts; resistivity}}, language = {{eng}}, number = {{11}}, pages = {{5182--5189}}, publisher = {{The American Chemical Society (ACS)}}, series = {{Nano Letters}}, title = {{Current−Voltage Characterization of Individual As-Grown Nanowires Using a Scanning Tunneling Microscope}}, url = {{http://dx.doi.org/10.1021/nl402570u}}, doi = {{10.1021/nl402570u}}, volume = {{13}}, year = {{2013}}, }