InAs nanowire MOSFET differential active mixer on Si-substrate
(2014) In Electronics Letters 50(9). p.682-682- Abstract
- An active single balanced down-conversion mixer is implemented using InAs nanowire metal oxide semiconductor field effect transistors (MOSFETs) as both active devices and passive resistive loads. Circuits with 6 dB low-frequency voltage gain and a 3 dB bandwidth of 2 GHz are measured for a DC power consumption of 3.8 mW from a 1.5 V supply. The circuits are fabricated using contacts made with 12 μmline- width optical lithography.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/4461284
- author
- Persson, Karl-Magnus LU ; Berg, Martin LU ; Sjöland, Henrik LU ; Lind, Erik LU and Wernersson, Lars-Erik LU
- organization
- publishing date
- 2014
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- circuit, RF, InAs, mixer, nanowire, MOSFET
- in
- Electronics Letters
- volume
- 50
- issue
- 9
- pages
- 682 - 682
- publisher
- IEE
- external identifiers
-
- wos:000335565800022
- scopus:84899718352
- ISSN
- 1350-911X
- DOI
- 10.1049/el.2013.4219
- project
- EIT_WWW Wireless with Wires
- language
- English
- LU publication?
- yes
- id
- ac3cd793-1acd-4876-88af-1bd6e1c6dd31 (old id 4461284)
- date added to LUP
- 2016-04-01 13:34:15
- date last changed
- 2024-04-17 02:49:12
@article{ac3cd793-1acd-4876-88af-1bd6e1c6dd31, abstract = {{An active single balanced down-conversion mixer is implemented using InAs nanowire metal oxide semiconductor field effect transistors (MOSFETs) as both active devices and passive resistive loads. Circuits with 6 dB low-frequency voltage gain and a 3 dB bandwidth of 2 GHz are measured for a DC power consumption of 3.8 mW from a 1.5 V supply. The circuits are fabricated using contacts made with 12 μmline- width optical lithography.}}, author = {{Persson, Karl-Magnus and Berg, Martin and Sjöland, Henrik and Lind, Erik and Wernersson, Lars-Erik}}, issn = {{1350-911X}}, keywords = {{circuit; RF; InAs; mixer; nanowire; MOSFET}}, language = {{eng}}, number = {{9}}, pages = {{682--682}}, publisher = {{IEE}}, series = {{Electronics Letters}}, title = {{InAs nanowire MOSFET differential active mixer on Si-substrate}}, url = {{http://dx.doi.org/10.1049/el.2013.4219}}, doi = {{10.1049/el.2013.4219}}, volume = {{50}}, year = {{2014}}, }