In situ etching for control over axial and radial III-V nanowire growth rates using HBr.
(2014) In Nanotechnology 25(50).- Abstract
- We report on the influence of hydrogen bromide (HBr) in situ etching on the growth of InP, GaP and GaAs nanowires. We find that HBr can be used to impede undesired radial growth during axial growth for all three material systems. The use of HBr opens a window for optimizing the growth parameters with respect to the materials' quality rather than only their morphology. Transmission electron microscopy (TEM) characterization reveals a partial transition from a wurtzite crystal structure to a zincblende upon the use of HBr during growth. For InP, defect-related luminescence due to parasitic radial growth is removed by use of HBr. For GaP, the etching with HBr reduced the defect-related luminescence, but no change in peak emission energy was... (More)
- We report on the influence of hydrogen bromide (HBr) in situ etching on the growth of InP, GaP and GaAs nanowires. We find that HBr can be used to impede undesired radial growth during axial growth for all three material systems. The use of HBr opens a window for optimizing the growth parameters with respect to the materials' quality rather than only their morphology. Transmission electron microscopy (TEM) characterization reveals a partial transition from a wurtzite crystal structure to a zincblende upon the use of HBr during growth. For InP, defect-related luminescence due to parasitic radial growth is removed by use of HBr. For GaP, the etching with HBr reduced the defect-related luminescence, but no change in peak emission energy was observed. For GaAs, the HBr etching resulted in a shift to lower photon emission energies due to a shift in the crystal structure, which reduced the wurtzite segments. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/4816078
- author
- Berg, Alexander LU ; Mergenthaler, Kilian LU ; Ek, Martin LU ; Pistol, Mats-Erik LU ; Wallenberg, Reine LU and Borgström, Magnus LU
- organization
- publishing date
- 2014
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Nanotechnology
- volume
- 25
- issue
- 50
- article number
- 505601
- publisher
- IOP Publishing
- external identifiers
-
- pmid:25422409
- wos:000345603900014
- scopus:84913583284
- pmid:25422409
- ISSN
- 0957-4484
- DOI
- 10.1088/0957-4484/25/50/505601
- language
- English
- LU publication?
- yes
- additional info
- The information about affiliations in this record was updated in December 2015. The record was previously connected to the following departments: Solid State Physics (011013006), Polymer and Materials Chemistry (LTH) (011001041)
- id
- 6d6c7637-4935-476a-81fd-aa42aa7abca2 (old id 4816078)
- date added to LUP
- 2016-04-01 10:53:31
- date last changed
- 2023-08-31 13:56:56
@article{6d6c7637-4935-476a-81fd-aa42aa7abca2, abstract = {{We report on the influence of hydrogen bromide (HBr) in situ etching on the growth of InP, GaP and GaAs nanowires. We find that HBr can be used to impede undesired radial growth during axial growth for all three material systems. The use of HBr opens a window for optimizing the growth parameters with respect to the materials' quality rather than only their morphology. Transmission electron microscopy (TEM) characterization reveals a partial transition from a wurtzite crystal structure to a zincblende upon the use of HBr during growth. For InP, defect-related luminescence due to parasitic radial growth is removed by use of HBr. For GaP, the etching with HBr reduced the defect-related luminescence, but no change in peak emission energy was observed. For GaAs, the HBr etching resulted in a shift to lower photon emission energies due to a shift in the crystal structure, which reduced the wurtzite segments.}}, author = {{Berg, Alexander and Mergenthaler, Kilian and Ek, Martin and Pistol, Mats-Erik and Wallenberg, Reine and Borgström, Magnus}}, issn = {{0957-4484}}, language = {{eng}}, number = {{50}}, publisher = {{IOP Publishing}}, series = {{Nanotechnology}}, title = {{In situ etching for control over axial and radial III-V nanowire growth rates using HBr.}}, url = {{http://dx.doi.org/10.1088/0957-4484/25/50/505601}}, doi = {{10.1088/0957-4484/25/50/505601}}, volume = {{25}}, year = {{2014}}, }