Coupling between lateral modes in a vertical resonant tunneling structure
(2002) In Physica E: Low-Dimensional Systems and Nanostructures 13(2-4). p.950-953- Abstract
- We present experimental results and theoretical calculations of the vertical electron transport through a laterally constricted resonant tunneling transistor. Current-voltage measurements at 4.2 K show numerous current peaks that exhibit a complex dependence on the applied gate voltage. A scattering-matrix approach combined with the Landauer formalism was used to perform quantum mechanical calculations of the electron transport through a quantum dot structure with laterally confined emitter and collector regions. The simulations qualitatively reproduce the measured data, suggesting a strong coupling between the lateral modes in the quantum dot and the collector
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/611332
- author
- Gustafson, Boel LU ; Csontos, Dan LU ; Suhara, M. ; Wernersson, Lars-Erik LU ; Seifert, Werner LU ; Xu, Hongqi LU and Samuelson, Lars LU
- organization
- publishing date
- 2002
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- quantum dot structure, 4.2 K, vertical resonant tunneling structure, vertical electron transport, laterally constricted resonant tunneling transistor, lateral modes coupling, scattering-matrix approach, Landauer formalism, current-voltage measurements
- in
- Physica E: Low-Dimensional Systems and Nanostructures
- volume
- 13
- issue
- 2-4
- pages
- 950 - 953
- publisher
- Elsevier
- external identifiers
-
- wos:000176869100199
- other:CODEN: PELNFM
- scopus:0036492976
- ISSN
- 1386-9477
- DOI
- 10.1016/S1386-9477(02)00242-4
- language
- English
- LU publication?
- yes
- id
- 28709d14-d47a-4b43-a6a5-1802ddc9c083 (old id 611332)
- date added to LUP
- 2016-04-01 16:54:25
- date last changed
- 2022-01-28 23:01:08
@article{28709d14-d47a-4b43-a6a5-1802ddc9c083, abstract = {{We present experimental results and theoretical calculations of the vertical electron transport through a laterally constricted resonant tunneling transistor. Current-voltage measurements at 4.2 K show numerous current peaks that exhibit a complex dependence on the applied gate voltage. A scattering-matrix approach combined with the Landauer formalism was used to perform quantum mechanical calculations of the electron transport through a quantum dot structure with laterally confined emitter and collector regions. The simulations qualitatively reproduce the measured data, suggesting a strong coupling between the lateral modes in the quantum dot and the collector}}, author = {{Gustafson, Boel and Csontos, Dan and Suhara, M. and Wernersson, Lars-Erik and Seifert, Werner and Xu, Hongqi and Samuelson, Lars}}, issn = {{1386-9477}}, keywords = {{quantum dot structure; 4.2 K; vertical resonant tunneling structure; vertical electron transport; laterally constricted resonant tunneling transistor; lateral modes coupling; scattering-matrix approach; Landauer formalism; current-voltage measurements}}, language = {{eng}}, number = {{2-4}}, pages = {{950--953}}, publisher = {{Elsevier}}, series = {{Physica E: Low-Dimensional Systems and Nanostructures}}, title = {{Coupling between lateral modes in a vertical resonant tunneling structure}}, url = {{http://dx.doi.org/10.1016/S1386-9477(02)00242-4}}, doi = {{10.1016/S1386-9477(02)00242-4}}, volume = {{13}}, year = {{2002}}, }