A 19.5-GHz 28-nm Class-C CMOS VCO, with a reasonably rigorous result on 1/f noise upconversion caused by short-channel effects
(2020) In IEEE Journal of Solid-State Circuits 55(7). p.1842-1853- Abstract
Class-C operation is leveraged to implement a K-band CMOS voltage-controlled oscillator (VCO) where the upconversion of 1/f current noise from the cross-coupled transistors in the oscillator core is robustly contained at a very low level. Implemented in a bulk 28-nm CMOS technology, the 12%-tuning-range VCO shows a phase noise as low as -112 dBc/Hz at 1-MHz offset (-86 dBc/Hz at 100 kHz offset) from a 19.5 GHz carrier while consuming 20.7 mW, achieving a figure of merit (FoM) of -185 dBc/Hz. The design is complemented by a theoretical investigation of 1/f noise upconversion caused by short-channel effects in the cross-coupled transistors, obtaining the first instance of a closed-form phase noise expression in the 1/f3 region.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/63a35027-3e78-4336-a5aa-aa3c47601217
- author
- Franceschin, Alessandro ; Andreani, Pietro LU ; Padovan, Fabio ; Bassi, Matteo and Bevilacqua, Andrea
- organization
- publishing date
- 2020
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- 1/f noise, phase noise, voltage-controlled oscillators (VCOs)
- in
- IEEE Journal of Solid-State Circuits
- volume
- 55
- issue
- 7
- article number
- 9085341
- pages
- 12 pages
- publisher
- IEEE - Institute of Electrical and Electronics Engineers Inc.
- external identifiers
-
- scopus:85087445690
- ISSN
- 0018-9200
- DOI
- 10.1109/JSSC.2020.2987702
- language
- English
- LU publication?
- yes
- id
- 63a35027-3e78-4336-a5aa-aa3c47601217
- date added to LUP
- 2020-07-15 13:23:59
- date last changed
- 2022-05-12 03:47:43
@article{63a35027-3e78-4336-a5aa-aa3c47601217, abstract = {{<p>Class-C operation is leveraged to implement a K-band CMOS voltage-controlled oscillator (VCO) where the upconversion of 1/f current noise from the cross-coupled transistors in the oscillator core is robustly contained at a very low level. Implemented in a bulk 28-nm CMOS technology, the 12%-tuning-range VCO shows a phase noise as low as -112 dBc/Hz at 1-MHz offset (-86 dBc/Hz at 100 kHz offset) from a 19.5 GHz carrier while consuming 20.7 mW, achieving a figure of merit (FoM) of -185 dBc/Hz. The design is complemented by a theoretical investigation of 1/f noise upconversion caused by short-channel effects in the cross-coupled transistors, obtaining the first instance of a closed-form phase noise expression in the 1/f3 region. </p>}}, author = {{Franceschin, Alessandro and Andreani, Pietro and Padovan, Fabio and Bassi, Matteo and Bevilacqua, Andrea}}, issn = {{0018-9200}}, keywords = {{1/f noise; phase noise; voltage-controlled oscillators (VCOs)}}, language = {{eng}}, number = {{7}}, pages = {{1842--1853}}, publisher = {{IEEE - Institute of Electrical and Electronics Engineers Inc.}}, series = {{IEEE Journal of Solid-State Circuits}}, title = {{A 19.5-GHz 28-nm Class-C CMOS VCO, with a reasonably rigorous result on 1/f noise upconversion caused by short-channel effects}}, url = {{http://dx.doi.org/10.1109/JSSC.2020.2987702}}, doi = {{10.1109/JSSC.2020.2987702}}, volume = {{55}}, year = {{2020}}, }