Skip to main content

Lund University Publications

LUND UNIVERSITY LIBRARIES

A 19.5-GHz 28-nm Class-C CMOS VCO, with a reasonably rigorous result on 1/f noise upconversion caused by short-channel effects

Franceschin, Alessandro ; Andreani, Pietro LU ; Padovan, Fabio ; Bassi, Matteo and Bevilacqua, Andrea (2020) In IEEE Journal of Solid-State Circuits 55(7). p.1842-1853
Abstract

Class-C operation is leveraged to implement a K-band CMOS voltage-controlled oscillator (VCO) where the upconversion of 1/f current noise from the cross-coupled transistors in the oscillator core is robustly contained at a very low level. Implemented in a bulk 28-nm CMOS technology, the 12%-tuning-range VCO shows a phase noise as low as -112 dBc/Hz at 1-MHz offset (-86 dBc/Hz at 100 kHz offset) from a 19.5 GHz carrier while consuming 20.7 mW, achieving a figure of merit (FoM) of -185 dBc/Hz. The design is complemented by a theoretical investigation of 1/f noise upconversion caused by short-channel effects in the cross-coupled transistors, obtaining the first instance of a closed-form phase noise expression in the 1/f3 region.

Please use this url to cite or link to this publication:
author
; ; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
1/f noise, phase noise, voltage-controlled oscillators (VCOs)
in
IEEE Journal of Solid-State Circuits
volume
55
issue
7
article number
9085341
pages
12 pages
publisher
IEEE - Institute of Electrical and Electronics Engineers Inc.
external identifiers
  • scopus:85087445690
ISSN
0018-9200
DOI
10.1109/JSSC.2020.2987702
language
English
LU publication?
yes
id
63a35027-3e78-4336-a5aa-aa3c47601217
date added to LUP
2020-07-15 13:23:59
date last changed
2022-05-12 03:47:43
@article{63a35027-3e78-4336-a5aa-aa3c47601217,
  abstract     = {{<p>Class-C operation is leveraged to implement a K-band CMOS voltage-controlled oscillator (VCO) where the upconversion of 1/f current noise from the cross-coupled transistors in the oscillator core is robustly contained at a very low level. Implemented in a bulk 28-nm CMOS technology, the 12%-tuning-range VCO shows a phase noise as low as -112 dBc/Hz at 1-MHz offset (-86 dBc/Hz at 100 kHz offset) from a 19.5 GHz carrier while consuming 20.7 mW, achieving a figure of merit (FoM) of -185 dBc/Hz. The design is complemented by a theoretical investigation of 1/f noise upconversion caused by short-channel effects in the cross-coupled transistors, obtaining the first instance of a closed-form phase noise expression in the 1/f3 region. </p>}},
  author       = {{Franceschin, Alessandro and Andreani, Pietro and Padovan, Fabio and Bassi, Matteo and Bevilacqua, Andrea}},
  issn         = {{0018-9200}},
  keywords     = {{1/f noise; phase noise; voltage-controlled oscillators (VCOs)}},
  language     = {{eng}},
  number       = {{7}},
  pages        = {{1842--1853}},
  publisher    = {{IEEE - Institute of Electrical and Electronics Engineers Inc.}},
  series       = {{IEEE Journal of Solid-State Circuits}},
  title        = {{A 19.5-GHz 28-nm Class-C CMOS VCO, with a reasonably rigorous result on 1/f noise upconversion caused by short-channel effects}},
  url          = {{http://dx.doi.org/10.1109/JSSC.2020.2987702}},
  doi          = {{10.1109/JSSC.2020.2987702}},
  volume       = {{55}},
  year         = {{2020}},
}