InAs1-xPx Nanowires for Device Engineering
(2006) In Nano Letters 6(3). p.403-407- Abstract
- We present the growth of homogeneous InAs1-xPx nanowires as well as InAs1-xPx heterostructure segments in InAs nanowires with P
concentrations varying from 22% to 100%. The incorporation of P has been studied as a function of TBP/TBAs ratio, temperature, and diameter
of the wires. The crystal structure of the InAs as well as the InAs1-xPx segments were found to be wurtzite as determined from high-resolution
transmission electron microscopy. Furthermore, temperature-dependent electrical transport measurements were performed on individual
heterostructured wires to extract the conduction band offset of InAs1-xPx relative to InAs as a function of composition. From these measurements
we extract a... (More) - We present the growth of homogeneous InAs1-xPx nanowires as well as InAs1-xPx heterostructure segments in InAs nanowires with P
concentrations varying from 22% to 100%. The incorporation of P has been studied as a function of TBP/TBAs ratio, temperature, and diameter
of the wires. The crystal structure of the InAs as well as the InAs1-xPx segments were found to be wurtzite as determined from high-resolution
transmission electron microscopy. Furthermore, temperature-dependent electrical transport measurements were performed on individual
heterostructured wires to extract the conduction band offset of InAs1-xPx relative to InAs as a function of composition. From these measurements
we extract a value of the linear coefficient of the conduction band versus x of 0.6 eV and a nonlinear coefficient, or bowing parameter, of 0.2
eV. Finally, homogeneous InAs0.8P0.2 nanowires were shown to have a nondegenerate n-type doping and function as field-effect transistors at
room temperature. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/644133
- author
- Persson, Ann LU ; Björk, Mikael LU ; Jeppesen, Sören LU ; Wagner, Jakob LU ; Wallenberg, Reine LU and Samuelson, Lars LU
- organization
- publishing date
- 2006
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Nano Letters
- volume
- 6
- issue
- 3
- pages
- 403 - 407
- publisher
- The American Chemical Society (ACS)
- external identifiers
-
- pmid:16522031
- wos:000236049800013
- scopus:33645453261
- pmid:16522031
- ISSN
- 1530-6992
- DOI
- 10.1021/nl052181e
- language
- English
- LU publication?
- yes
- additional info
- The information about affiliations in this record was updated in December 2015. The record was previously connected to the following departments: Solid State Physics (011013006), Polymer and Materials Chemistry (LTH) (011001041)
- id
- 22962a94-7e19-47e5-9bb6-63fe0ba1c1fc (old id 644133)
- alternative location
- http://pubs.acs.org/cgi-bin/article.cgi/nalefd/2006/6/i03/pdf/nl052181e.pdf
- date added to LUP
- 2016-04-04 11:06:19
- date last changed
- 2022-01-29 21:20:12
@article{22962a94-7e19-47e5-9bb6-63fe0ba1c1fc,
abstract = {{We present the growth of homogeneous InAs1-xPx nanowires as well as InAs1-xPx heterostructure segments in InAs nanowires with P<br/><br>
concentrations varying from 22% to 100%. The incorporation of P has been studied as a function of TBP/TBAs ratio, temperature, and diameter<br/><br>
of the wires. The crystal structure of the InAs as well as the InAs1-xPx segments were found to be wurtzite as determined from high-resolution<br/><br>
transmission electron microscopy. Furthermore, temperature-dependent electrical transport measurements were performed on individual<br/><br>
heterostructured wires to extract the conduction band offset of InAs1-xPx relative to InAs as a function of composition. From these measurements<br/><br>
we extract a value of the linear coefficient of the conduction band versus x of 0.6 eV and a nonlinear coefficient, or bowing parameter, of 0.2<br/><br>
eV. Finally, homogeneous InAs0.8P0.2 nanowires were shown to have a nondegenerate n-type doping and function as field-effect transistors at<br/><br>
room temperature.}},
author = {{Persson, Ann and Björk, Mikael and Jeppesen, Sören and Wagner, Jakob and Wallenberg, Reine and Samuelson, Lars}},
issn = {{1530-6992}},
language = {{eng}},
number = {{3}},
pages = {{403--407}},
publisher = {{The American Chemical Society (ACS)}},
series = {{Nano Letters}},
title = {{InAs1-xPx Nanowires for Device Engineering}},
url = {{http://dx.doi.org/10.1021/nl052181e}},
doi = {{10.1021/nl052181e}},
volume = {{6}},
year = {{2006}},
}