Impact of in situ NH3 pre-treatment of LPCVD SiN passivation on GaN HEMT performance
(2022) In Semiconductor Science and Technology 37(3).- Abstract
- The impact on the performance of GaN high electron mobility transistors (HEMTs) of in situ ammonia (NH3)
pre-treatment prior to the deposition of silicon nitride (SiN)
passivation with low-pressure chemical vapor deposition (LPCVD ) is
investigated. Three different NH3 pre-treatment durations (0,
3, and 10 min) were compared in terms of interface properties and
device performance. A reduction of oxygen (O) at the interface between
SiN and epi-structure is detected by scanning transmission electron
microscopy (STEM )-electron energy loss spectroscopy (EELS) measurements
in the sample subjected to 10 min of pre-treatment. The samples
subjected to NH3... (More) - The impact on the performance of GaN high electron mobility transistors (HEMTs) of in situ ammonia (NH3)
pre-treatment prior to the deposition of silicon nitride (SiN)
passivation with low-pressure chemical vapor deposition (LPCVD ) is
investigated. Three different NH3 pre-treatment durations (0,
3, and 10 min) were compared in terms of interface properties and
device performance. A reduction of oxygen (O) at the interface between
SiN and epi-structure is detected by scanning transmission electron
microscopy (STEM )-electron energy loss spectroscopy (EELS) measurements
in the sample subjected to 10 min of pre-treatment. The samples
subjected to NH3 pre-treatment show a reduced surface-related
current dispersion of 9% (compared to 16% for the untreated sample),
which is attributed to the reduction of O at the SiN/epi interface.
Furthermore, NH3 pre-treatment for 10 min significantly
improves the current dispersion uniformity from 14.5% to 1.9%. The
reduced trapping effects result in a high output power of 3.4 W mm−1 at 3 GHz (compared to 2.6 W mm−1 for the untreated sample). These results demonstrate that the in situ NH3
pre-treatment before LPCVD of SiN passivation is critical and can
effectively improves the large-signal microwave performance of GaN
HEMTs. (Less)
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- author
- organization
- publishing date
- 2022
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- high mobility field effect transistor, structures, GaN, passivation, SiNx
- in
- Semiconductor Science and Technology
- volume
- 37
- issue
- 3
- article number
- 035011
- pages
- 6 pages
- publisher
- IOP Publishing
- external identifiers
-
- scopus:85124213865
- ISSN
- 0268-1242
- DOI
- 10.1088/1361-6641/ac4b17
- language
- English
- LU publication?
- yes
- id
- 6cabd4e6-8325-46c2-8f7d-df3640d2ca82
- date added to LUP
- 2022-12-06 17:40:15
- date last changed
- 2023-11-21 13:46:18
@article{6cabd4e6-8325-46c2-8f7d-df3640d2ca82, abstract = {{The impact on the performance of GaN high electron mobility transistors (HEMTs) of <i>in situ</i> ammonia (NH<sub>3</sub>)<br> pre-treatment prior to the deposition of silicon nitride (SiN) <br> passivation with low-pressure chemical vapor deposition (LPCVD ) is <br> investigated. Three different NH<sub>3</sub> pre-treatment durations (0,<br> 3, and 10 min) were compared in terms of interface properties and <br> device performance. A reduction of oxygen (O) at the interface between <br> SiN and epi-structure is detected by scanning transmission electron <br> microscopy (STEM )-electron energy loss spectroscopy (EELS) measurements<br> in the sample subjected to 10 min of pre-treatment. The samples <br> subjected to NH<sub>3</sub> pre-treatment show a reduced surface-related<br> current dispersion of 9% (compared to 16% for the untreated sample), <br> which is attributed to the reduction of O at the SiN/epi interface. <br> Furthermore, NH<sub>3</sub> pre-treatment for 10 min significantly <br> improves the current dispersion uniformity from 14.5% to 1.9%. The <br> reduced trapping effects result in a high output power of 3.4 W mm<sup>−1</sup> at 3 GHz (compared to 2.6 W mm<sup>−1</sup> for the untreated sample). These results demonstrate that the <i>in situ</i> NH<sub>3</sub><br> pre-treatment before LPCVD of SiN passivation is critical and can <br> effectively improves the large-signal microwave performance of GaN <br> HEMTs.}}, author = {{Chen, Ding-Yuan and Persson, Axel R and Wen, Kai-Hsin and Sommer, Daniel and Grünenpütt, Jan and Blanck, Hervé and Thorsell, Mattias and Kordina, Olof and Darakchieva, Vanya and Persson, Per O Å and Chen, Jr-Tai and Rorsman, Niklas}}, issn = {{0268-1242}}, keywords = {{high mobility field effect transistor; structures; GaN; passivation; SiNx}}, language = {{eng}}, number = {{3}}, publisher = {{IOP Publishing}}, series = {{Semiconductor Science and Technology}}, title = {{Impact of <i>in situ</i> NH<sub>3</sub> pre-treatment of LPCVD SiN passivation on GaN HEMT performance}}, url = {{http://dx.doi.org/10.1088/1361-6641/ac4b17}}, doi = {{10.1088/1361-6641/ac4b17}}, volume = {{37}}, year = {{2022}}, }