Comparison of aluminum nitride thin films prepared by magnetron sputter epitaxy in nitrogen and ammonia atmosphere
(2024) In Applied Physics Letters 124(18).- Abstract
Wurtzite-type aluminum nitride (AlN) thin films exhibiting high thermal conductivity, large grain size, and low surface roughness are desired for both bulk acoustic wave and surface acoustic wave resonators. In this work, we use ammonia (NH3) assisted reactive sputter deposition of AlN to significantly improve these properties. The study shows a systematic change in the structural, thermal, and morphological properties of AlN grown in nitrogen (N2) and N2 + NH3 atmosphere. The study demonstrates that NH3 assisted AlN sputtering facilitates 2D growth. In addition, the study presents a growth model relating the 2D growth to improve the mobility of aluminum (Al) and nitrogen (N)... (More)
Wurtzite-type aluminum nitride (AlN) thin films exhibiting high thermal conductivity, large grain size, and low surface roughness are desired for both bulk acoustic wave and surface acoustic wave resonators. In this work, we use ammonia (NH3) assisted reactive sputter deposition of AlN to significantly improve these properties. The study shows a systematic change in the structural, thermal, and morphological properties of AlN grown in nitrogen (N2) and N2 + NH3 atmosphere. The study demonstrates that NH3 assisted AlN sputtering facilitates 2D growth. In addition, the study presents a growth model relating the 2D growth to improve the mobility of aluminum (Al) and nitrogen (N) ad-atoms in NH3 atmosphere. Consequently, the thermal conductivity and roughness improve by ≈ 76%, and ≈ 35%, while the grain size increases by ≈ 78%.
(Less)
- author
- organization
- publishing date
- 2024-04-29
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Applied Physics Letters
- volume
- 124
- issue
- 18
- article number
- 182101
- publisher
- American Institute of Physics (AIP)
- external identifiers
-
- scopus:85192238024
- ISSN
- 0003-6951
- DOI
- 10.1063/5.0202161
- language
- English
- LU publication?
- yes
- id
- 83d00c2d-2262-4cf4-b769-cdbc65c5ea69
- date added to LUP
- 2024-05-21 13:59:03
- date last changed
- 2024-05-21 14:55:59
@article{83d00c2d-2262-4cf4-b769-cdbc65c5ea69, abstract = {{<p>Wurtzite-type aluminum nitride (AlN) thin films exhibiting high thermal conductivity, large grain size, and low surface roughness are desired for both bulk acoustic wave and surface acoustic wave resonators. In this work, we use ammonia (NH<sub>3</sub>) assisted reactive sputter deposition of AlN to significantly improve these properties. The study shows a systematic change in the structural, thermal, and morphological properties of AlN grown in nitrogen (N<sub>2</sub>) and N<sub>2</sub> + NH<sub>3</sub> atmosphere. The study demonstrates that NH<sub>3</sub> assisted AlN sputtering facilitates 2D growth. In addition, the study presents a growth model relating the 2D growth to improve the mobility of aluminum (Al) and nitrogen (N) ad-atoms in NH<sub>3</sub> atmosphere. Consequently, the thermal conductivity and roughness improve by ≈ 76%, and ≈ 35%, while the grain size increases by ≈ 78%.</p>}}, author = {{Sundarapandian, Balasubramanian and Tran, Dat Q. and Kirste, Lutz and Straňák, Patrik and Graff, Andreas and Prescher, Mario and Nair, Akash and Raghuwanshi, Mohit and Darakchieva, Vanya and Paskov, Plamen P. and Ambacher, Oliver}}, issn = {{0003-6951}}, language = {{eng}}, month = {{04}}, number = {{18}}, publisher = {{American Institute of Physics (AIP)}}, series = {{Applied Physics Letters}}, title = {{Comparison of aluminum nitride thin films prepared by magnetron sputter epitaxy in nitrogen and ammonia atmosphere}}, url = {{http://dx.doi.org/10.1063/5.0202161}}, doi = {{10.1063/5.0202161}}, volume = {{124}}, year = {{2024}}, }