Vanya Darakchieva

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2024
Mark COMPREHENSIVE SEMICONDUCTOR SCIENCE AND TECHNOLOGY, SECOND EDITION : Volumes 1-3
Fornari, Roberto ; Grundmann, Marius ; Darakchieva, Vanya ^LU and Fay, Patrick (2024) 1-3.
- Book/Report › Book
Mark Characterization of Drain-Induced Barrier Lowering in GaN HEMTs Using a Drain Current Injection Technique
Hult, Björn ; Bergsten, Johan ; Ferrand-Drake Del Castillo, Ragnar ; Darakchieva, Vanya ^LU ; Malmros, Anna ; Hjelmgren, Hans ; Thorsell, Mattias and Rorsman, Niklas (2024) In IEEE Transactions on Electron Devices 71(12). p.7383-7389
- Contribution to journal › Article
Mark Effective uniaxial dielectric function tensor and optical phonons in (2 ¯ 01)-oriented β - Ga2 O3 films with equally distributed sixfold-rotation domains
Mock, Alyssa ; Richter, Steffen ^LU ; Papamichail, Alexis ; Stanishev, Vallery ; Ghezellou, Misagh ; Ul-Hassan, Jawad ; Popp, Andreas ; Bin Anooz, Saud ; Gogova, Daniela and Ranga, Praneeth , et al. (2024) In Physical Review Applied 22(4).
- Contribution to journal › Article
Mark PREFACE TO VOLUME 2
Darakchieva, Vanya ^LU (2024) 2. p.2-2
- Chapter in Book/Report/Conference proceeding › Foreword/Postscript
2023
Mark Tuning composition in graded AlGaN channel HEMTs toward improved linearity for low-noise radio-frequency amplifiers
Papamichail, A. ; Persson, A. R. ^LU ; Richter, S. ^LU ; Kühne, P. ^LU ; Stanishev, V. ; Persson, P. O.Å. ^LU ; Ferrand-Drake Del Castillo, R. ; Thorsell, M. ; Hjelmgren, H. and Paskov, P. P. , et al. (2023) In Applied Physics Letters 122(15).
- Contribution to journal › Article
Mark Tuning of Quasi-Vertical GaN FinFETs Fabricated on SiC Substrates
Gribisch, Philipp ^LU ; Carrascon, Rosalia Delgado ; Darakchieva, Vanya ^LU and Lind, Erik ^LU (2023) In IEEE Transactions on Electron Devices 70(5). p.2408-2414
- Contribution to journal › Article
Mark Thermal conductivity of Sc_xAl_1−xN and Y_xAl_1−xN alloys
Tran, Dat Q. ; Tasnádi, Ferenc ; Žukauskaitė, Agnė ; Birch, Jens ; Darakchieva, Vanya ^LU and Paskov, Plamen P. (2023) In Applied Physics Letters 122(18).
- Contribution to journal › Article
Mark Low Al-content n-type Al_xGa_1−xN layers with a high-electron-mobility grown by hot-wall metalorganic chemical vapor deposition
Stanishev, Vallery ; Armakavicius, Nerijus ; Gogova, Daniela ; Nawaz, Muhammad ; Rorsman, Niklas ; Paskov, Plamen P. and Darakchieva, Vanya ^LU (2023) In Vacuum 217.
- Contribution to journal › Article
Mark Correlating cathodoluminescence and scanning transmission electron microscopy for InGaN platelet nano-LEDs
Persson, Axel R. ; Gustafsson, Anders ^LU ; Bi, Zhaoxia ^LU ; Samuelson, Lars ^LU ; Darakchieva, Vanya ^LU and Persson, Per O.Å. (2023) In Applied Physics Letters 123(2).
- Contribution to journal › Article
Mark Observations of very fast electron traps at SiC/high-κ dielectric interfaces
Vidarsson, Arnar M. ; Persson, Axel R. ; Chen, Jr Tai ; Haasmann, Daniel ; Hassan, Jawad Ul ; Dimitrijev, Sima ; Rorsman, Niklas ; Darakchieva, Vanya ^LU and Sveinbjörnsson, Einar I. (2023) In APL Materials 11(11).
- Contribution to journal › Article