Hongqi Xu
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- 2002
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Mark
Characteristics of electron transport through vertical double-barrier quantum-dot structures: Effects of symmetric and asymmetric variations of the lateral confinement potentials
- Contribution to journal › Article
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Mark
Negative differential capacitance of quantum dots
- Contribution to journal › Article
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Mark
A novel frequency-multiplication device based on three-terminal ballistic junction
- Contribution to journal › Article
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Mark
Theoretical study of electronic structure of silicon nanocrystals
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Quantum ratchets and quantum heat pumps
- Contribution to journal › Article
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Mark
Diode and transistor behaviors of three-terminal ballistic junctions
- Contribution to journal › Article
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Mark
Electronic structure of nanometer-scale GaAs whiskers
- Contribution to journal › Article
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Mark
Single-electron tunneling effects in a metallic double dot device
- Contribution to journal › Article
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Mark
Nanoimprint lithography for fabrication of three-terminal ballistic junctions in InP/GaInAs
- Contribution to journal › Article
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Mark
High frequency characterization of a GaInAs/InP electronic waveguide T-branch switch
- Contribution to journal › Article
